RB168VAM-30

Schottky Barrier Diode RB168VAM-30 Data Sheet lApplication General rectification lFeatures 1) Small mold type (TUMD2M) 2) High reliability 3) Super low IR lDimensions (Unit : mm) 1.4±0.1 0.8±0.05 0.17 +0.10 -0.05 1.0±0.10 0.60 +0.20 -0.10 lLand Size Figure (Unit : mm) 1.1 (1) 0.8 0.5 2.0 1.5±0.10 2.0±0.1 2.5±0.2 (2) ROHM : TUMD2M Manufacture date and factory 0.4±0.10 0~0.1 TUMD2M lStructure (1)Cathode lConstruction lTaping Dimensions (Unit : mm) Silicon epitaxial planar type 4.0±0.1 2.0±0.05 4.0±0.1 Φ1.5 +0.1 -0 (2) Anode 0.25±0.05 1.75±0.1 3.5±0.05 8.0±0.2 5.5±0.2 2.8±0.05 1.53±0.03 Φ1.0+-00.2 0.9±0.08 lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive Peak Reverse Voltage VRM Duty≦0.5 30 V Reverse Voltage VR Direct Reverse Voltage Average Forward Rectified Current Non-repetitive Forward Current Surge Peak Io IFSM Glass epoxy board mounted, 60Hz half sin Wave, resistive load, Tc=...