Schottky barrier dio de
RB205T-90NZ
Applications Switching power supply
Dimensions (Unit : mm)
Features 1) Cathode...
Schottky barrier dio de
RB205T-90NZ
Applications Switching power supply
Dimensions (Unit : mm)
Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability
Construction Silicon epitaxial planer
205 9
Data Sheet
Structure
(1) (2) (3)
●Packing Dimensions (Unit : mm) 7
540
34.5
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1)
VRM 90 VR 90 Io 15
Forward current surge peak (60Hz / 1cyc) (*1) Junction temperature
IFSM Tj
100 150
Storage temperature
Tstg 40 to 150
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=121C
Electrical characteristic (Ta=25°C) Parameter
Forward voltage Reverse current Thermal impedance
Symbol Min. Typ. Max. VF - - 0.78 IR - - 300 jc - - 2
Unit V V A A C C
Unit V A
C/W
Conditions
IF=7.5A VR=90V junction to case
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