Schottky Barrier Diode
RB218T150FH
Application Switching power supply
Features 1) Cathode common dual type 2) High re...
Schottky Barrier Diode
RB218T150FH
Application Switching power supply
Features 1) Cathode common dual type 2) High reliability 3) Super low IR
Construction Silicon epitaxial planar type
Dimensions (Unit : mm)
10.0±00..31
3.2±0.2
4.5±00..31 2.8±00..21
15.0±00..24
12.0±0.2
5.0±0.2
8.0±0.2
1
1.2 1.3 0.8
2.45±0.5 2.45±0.5
(1) (2) (3) ROHM : TO220FN
1 : Manufacture date
14.0±0.5
2.6±0.5 0.75±00..015
Datasheet AEC-Q101 Qualified Structure
(1) (2) (3) Anode Cathode Anode
Absolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Repetitive peak reverse voltage Reverse voltage Average forward rectified current
Non-repetitive forward current surge peak
VRM VR Io IFSM
Operating junction temperature Storage temperature
Tj Tstg
Conditions
Duty≦0.5
Direct reverse voltage
60Hz half sin wave, resistive load, IO/2 per diode, Tc=115ºC Max.
60Hz half sin wave, Non-repetitive at Ta=25ºC , 1cycle, per diode
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Limits Unit 150 V 150 V 20 A 100 A 150 °...
