RB218T150NZ

Schottky Barrier Diode RB218T150NZ lApplication Switching power supply lFeatures 1) Cathode common dual type 2) High reliability 3) Super low IR lDimensions (Unit : mm) 4.5±00..31 10.0±00..31 f3.2±0.2 2.8±00..21 15.0±00..24 12.0±0.2 5.0±0.2 8.0±0.2 1 1.2 1.3 0.8 2.6±0.5 14.0±0.5 lConstruction Silicon epitaxial planar type 2.45±0.5 2.45±0.5 (1) (2) (3) 0.75±00..015 ROHM : TO220FN 1 : Manufacture date Data Sheet lStructure (1) (2) (3) Anode Cathode Anode lPackage Dimensions (Unit : mm) 7 540 34.5 lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Repetitive peak reverse voltage VRM Reverse voltage VR Average forward rectified current Io Non-repetitive forward current surge peak IFSM Operating junction temperature Tj Storage temperature Tstg lElectrical Characteristics (Tj= 25°C) Parameter Symbol Forward voltage Reverse current Thermal resistance VF IR Rth(j-c) Conditions Duty≦0.5 Direct reverse voltage 60Hz half sin wave, resistive...