RB228NS-60
Schottky Barrier Diode
●Outline
VR
60
V
Io
30
A
IFS...
RB228NS-60
Schottky Barrier Diode
●Outline
VR
60
V
Io
30
A
IFSM
100
A
●Features High reliability Power mold type Cathode common dual type Super Low IR
●Inner Circuit
Data sheet
●Application
●Packaging Specifications
Switching power supply
Packing
Embossed Tape
Reel Size(mm)
330
Taping Width(mm)
24
●Structure
Quantity(pcs)
1000
Silicon epitaxial planar
Taping Code
TL
Marking
RB228NS60
●Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
60
V
Reverse voltage Average rectified forward current Peak forward surge current Junction temperature
VR
Reverse direct voltage
60
V
Io
60Hz half sin waveform，resistive load， Io/2 per diode，Tc=100℃Max.
30
A
IFSM
60Hz half sin waveform， non-repetitive，per diode，Ta=25℃
100
A
Tj
-
150
℃
Storage temperature
Tstg
-
-55 ～ 150
℃
Attention
www.rohm.com © 2018- ROHMCo., Ltd.All rights reserved.
1/6
2019/05/27_Rev.003
RB228NS-60
Data sheet
●Electrical Characteristics Parameter
Forward voltage(1) Reverse current(1)
Note (1) Value per diode
(Tj=25ºC unless otherwise specified)
Symbol
Conditions
VF
IF=15A
IR
VR=60V
Min. Typ. Max. Unit - - 0.83 V - - 10 μA
●Thermal Characteristics
Parameter
Sym...
