RN262G

Diodes PIN diode RN262G RN262G zApplications High frequency switching zExternal dimensions (Unit : mm) 0.6±0.05 0.13±0.03 zLand size figure (Unit : mm) 0.5 1.0±0.05 1.4±0.05 0.5 1.2 zFeatures 1) Ultra small mold type. (VMD2) 2) Low high-frequency forward resistance / low capacitance (CT). zConstruction Silicon epitaxial planar 0.27±0.03 0.5±0.05 ROHM : VMD2 dot (year week factory) zTaping dimensions (Unit : mm) 4±0.1 2±0.05 φ1.5+0.1 　　　　　0 VMD2 zStructure 0.18±0.05 1.75±0.1 0.4 3.5±0.05 8.0±0.3 0.1 2.1±0.1 1.11±0.05 0.76±0.1 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg 4±0.1 Limits 30 100 100 150 -55 to +150 2±0.05 φ0.5 Unit V mA mA ℃ ℃ 0.3 0.65±0.05 zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Forward voltage Reverse current VF - - 1 IR - - 0.1 Capacitance between terminals Ct...