V4PAN50-M3

www.vishay.com V4PAN50-M3 Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier TMBS® SMPATM Top View Bottom View DO-221BC (SMPA) PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 4.0 A (TA = 125 °C) TJ max. Package 4.0 A 50 V 80 A 0.46 V 150 °C DO-221BC (SMPA) Diode variation Single die FEATURES Very low profile - typical height of 0.95 mm Ideal for automated placement Trench MOS Schottky technology Low power losses, high efficiency Low forward voltage drop Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage, high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. MECHANICAL DATA Case: DO-221BC (SMPA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Ma...