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WBP13003D

Winsemi

NPN Power Transistor

WBP13003D High Voltage Fast-Switching NPN Power Transistor Features ■ Very High Switching Speed ■ High Voltage Capabili...


Winsemi

WBP13003D

File Download Download WBP13003D Datasheet


Description
WBP13003D High Voltage Fast-Switching NPN Power Transistor Features ■ Very High Switching Speed ■ High Voltage Capability ■ Wide Reverse Bias SOA ■ Built-in free wheeling diode symbol 2.Collector 1.Base 3.Em itter General Description This Device is designed for high Voltage ,High speed switching Characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Parameter VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current ICP Collector pulse Current IB Base Current IBM Base peak Current Total Dissipation at Tc*=25℃ PC Total Dissipation at Ta*=25℃ TJ Operation Junction Temperature TSTG Storage Temperature Test conditions VBE=0 IB=0 IC=0 tP=5ms Value 700 400 9.0 1.5 3.0 0.75 1.5 40 1.2 -40~150 -40~150 Units V V V A A A A W ℃ ℃ Tc :Case temperature (good cooling) Ta :Ambient temperature (without heat sink) Thermal characteristics Symbol Parameter...




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