TM HCTS20MS
September 1995
Radiation Hardened Dual 4-Input NAND Gate
Features
3 Micron Radiation Hardened SOS CMOS
Total Dose 200K RAD (Si) SEP Effective LET No Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day
(Typ) Dose Rate Survivability: >1 x 1012 RAD (Si)/s Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse
La...
