HS-303AEH

Datasheet HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH Radiation Hardened CMOS Dual SPDT Analog Switch The HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH analog switches are monolithic devices fabricated using the Renesas dielectrically isolated Radiation Hardened Silicon Gate (RSG) process technology to ensure latch-up free operation. They are pinout compatible and functionally equivalent to the HS-303RH, but offer improved 300kRAD(Si) total dose capability. These switches offer low-resistance switching performance for analog voltages up to the supply rails. ON-resistance is low and stays reasonably constant over the full range of operating voltage and current. ON-resistance also stays reasonably constant when exposed to radiation. Break-before-make switching is controlled by 5V digital inputs. The HS-303ARH and HS-303AEH should be operated with nominal ±15V supplies, while the HS-303BRH and HS-303BEH should be operated with nominal ±12V supplies. Specifications Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD number listed in the following must be used when ordering. Detailed Electrical Specifications for the HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH are contained in SMD 5962-95813. Functional Diagram IN N P D Logic 0 1 Truth Table SW1 and SW2 OFF ON SW3 and SW4 ON OFF Features QML, per MIL-PRF-38535 Radiation performance ○ Total dose: 3x105rad(Si) ○ SEE: For LET = 60MeVcm2/mg at 60° incident angle...