RB228T100NZ

Schottky Barrier Diode RB228T100NZ Applications Switching power supply Dimensions (Unit : mm) Features 1) Cathode common dual type 2) Low IR 3) High reliability Datasheet Structure Cathode (2) (1) (3) Anode Anode Construction Silicon epitaxial planar type ROHM : TO220FN 1 : Manufacture date Package Dimensions (Unit : mm) 7 540 34.5 Absolute Maximum Ratings (Tc= 25°C) Parameter Symbol Repetitive peak reverse voltage VRM Reverse voltage VR Average forward rectified current Io Non-repetitive forward current surge peak IFSM Operating junction temperature Tj Storage temperature Tstg Electrical Characteristics (Tj= 25°C) Parameter Symbol Forward voltage Reverse current Thermal resistance VF IR Rth(j-c) Conditions Duty≦0.5 Direct reverse voltage 60Hz half sin wave, resistive load, IO/2 per diode, Tc=83ºC Max. 60Hz half sin wave, Non-repetitive at Ta=25ºC , 1cycle, per diode - - Limits Unit 110 V 100 V 30 A 100 A 150 °C 40 to 150 °C Conditions IF=5A VR=100V Junction to case Min. Typ. Max. Unit - - 0.87 V - - 5 A - - 2.00 °C/W www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/4 2017.07 - Rev.B RB228T100NZ FORWARD CURRENT:IF(A) 100 Ta=75°C 10 Ta=125°C 1 Ta=150°C 0.1 Ta=25°C 0.01 Ta=25°C 0.001 100 200 300 400 500 600 700 800 900 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1000 f=1MHz 100 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) 10 0 400 300 200 100 0 10 20 30 REVERSE VOLTAGE:VR...