RB558W M
Schottky Barrier Diode
●Outline
VR 30 V
Io 100 mA
IFSM 0.5 A
...
RB558W M
Schottky Barrier Diode
●Outline
VR 30 V
Io 100 mA
IFSM 0.5 A
●Features High reliability Small mold type Super Low VF
●Inner Circuit
Data sheet
●Application
●Packaging Specifications
Small current rectification
Packing
Embossed Tape
Reel Size(mm)
180
●Structure
Taping Width(mm) Basic Ordering Unit(pcs)
8 3000
Epitaxial planar
Taping Code
TL
Marking
3W
●Absolute Maximum Ratings (Ta = 25ºC unless otherwise stated)
Parameter
Symbol
Conditions
Limits
Unit
Reverse voltage
VR Reverse direct voltage
30 V
Average rectified forward current
Io
Glass epoxy mounted、60Hz half sin waveform、resistive load、per diode
100 mA
Peak forward surge current
IFSM
60Hz half sin waveform、Non-repetitive、 one cycle、per diode、Ta=25ºC
Junction temperature
Tj -
Storage temperature
Tstg
-
●Characteristics (Ta = 25ºC unless otherwise stated)
Parameter
Symbol
Conditions
Forward voltage
VF1 IF=10mA VF2 IF=100mA
Reverse current
IR VR=10V
※Caution：static electricity
0.5
125 -40 ～ 125
A
℃ ℃
Value per diode Min. Typ. Max. Unit
- - 0.35 V - - 0.49 V - - 10 μA
Attention
www.rohm.com © 2016 ROHMCo., Ltd.All rights reserved.
1/4
2018/06/07_Rev.002
RB558WM
●Characteristic Curves
Data sheet
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