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MBR4015LWT

ON Semiconductor

Schottky Power Rectifier

MBR4015LWT SWITCHMODEt Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle...


ON Semiconductor

MBR4015LWT

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Description
MBR4015LWT SWITCHMODEt Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features Highly Stable Oxide Passivated Junction Guardring for Overvoltage Protection Low Forward Voltage Drop Dual Diode Construction; Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating. Full Electrical Isolation without Additional Hardware Pb−Free Package is Available* Mechanical Characteristics Case: Molded Epoxy Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 4.3 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C M...




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