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NSVR0320MW2T1G

ON Semiconductor

Schottky Barrier Diodes

Schottky Barrier Diodes NSR0320MW2T1G, NSVR0320MW2T1G, NSR0320MW2T3G These Schottky barrier diodes are designed for hig...


ON Semiconductor

NSVR0320MW2T1G

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Description
Schottky Barrier Diodes NSR0320MW2T1G, NSVR0320MW2T1G, NSR0320MW2T3G These Schottky barrier diodes are designed for high current, handling capability, and low forward voltage performance. Features Low Forward Voltage − 0.24 Volts (Typ) @ IF = 10 mAdc High Current Capability ESD Rating: ♦ Human Body Model: CLASS 3B ♦ Machine Model: C NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage Peak Revese Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C VR VRM PF 20 Vdc 23 V 200 mW 2.0 mW/°C Forward Current (DC) Continuous IF A 1 Forward Current t = 8.3 ms Half Sinewave IFSM A 5 Thermal Resistance, Junction−to−Ambient 175 mm2, 1 oz. Cu, FR−4 RqJA 500 °C/W Thermal Resistance, Junction−to−Lead 175 mm2, 1 oz. Cu, FR−4 RqJL 322 °C/W Junction Temperature Range TJ −55 to °C +125 Storage Temperature Range Tstg −55 to °C +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. DATA SHEET www.onsemi.com HIGH CURRENT SCHOTTKY BARRIER DIODE SOD−323 CASE 477 STYLE 1 1 CATHODE 2 ANODE MARKING DIAGRAM RD MG G RD = Speci...




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