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TSUS6202 Datasheet, Equivalent, Emitting Diode.Infrared Emitting Diode Infrared Emitting Diode |
| Part | TSUS6202 |
|---|---|
| Description | Infrared Emitting Diode |
| Feature | www. vishay. com TSUS6202 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs 94 8390 DESCRIPTION TSUS6202 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 15° • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 APPLICA. |
| Manufacture | Vishay |
| Datasheet |
| Part | TSUS6202 |
|---|---|
| Description | Infrared Emitting Diode |
| Feature | www. vishay. com TSUS6202 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs 94 8390 DESCRIPTION TSUS6202 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 15° • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 APPLICA. |
| Manufacture | Vishay |
| Datasheet |
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