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AP85L02J Datasheet, Equivalent, POWER MOSFET.N-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
　
　
　
| Part | AP85L02J |
|---|---|
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Feature | AP85L02H/J
Advanced Power Electronics C orp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET â–¼ Low Gate Charge â–¼ Simple Drive Requirement â–¼ Fast Switching De scription G D S The TO-252 package i s universally preferred for all commerc ialindustrial surface mount application s and suited for low voltage applicatio ns such as DC/DC converters. The throug h-hole version (AP85L02J) is available for low-profile applications. BVDSS RD S(ON) ID 25V 6mΩ 85A G D S TO-252(H) Absolute Maximum Ratings Symbol Par ameter VDS VGS ID@TC=25℃ ID@TC=100â„ ƒ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Contin . |
| Manufacture | Advanced Power Electronics |
| Datasheet |
| Part | AP85L02J |
|---|---|
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Feature | AP85L02H/J
Advanced Power Electronics C orp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET â–¼ Low Gate Charge â–¼ Simple Drive Requirement â–¼ Fast Switching De scription G D S The TO-252 package i s universally preferred for all commerc ialindustrial surface mount application s and suited for low voltage applicatio ns such as DC/DC converters. The throug h-hole version (AP85L02J) is available for low-profile applications. BVDSS RD S(ON) ID 25V 6mΩ 85A G D S TO-252(H) Absolute Maximum Ratings Symbol Par ameter VDS VGS ID@TC=25℃ ID@TC=100â„ ƒ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Contin . |
| Manufacture | Advanced Power Electronics |
| Datasheet |
　
　
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