RBQ10T65ANZ

Schottky Barrier Diode RBQ10T65ANZ Applications Switching power supply Dimensions (Unit : mm) Features 1) Power mold type (TO-220FN) 2) Cathode common dual type 3) High reliability 4) Low IR φ3.2±0.2 ① Datasheet Structure (1) (2) (3) Anode Cathode Anode Construction Silicon epitaxial planar type ROHM : : TO-220FN ① : Manufacture date Packing Dimensions (Unit : mm) 7 540 34.5 Absolute Maximum Ratings (Tc= 25°C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Average forward rectified current Non-repetitive forward current surge peak Operating junction temperature Storage temperature VRM VR Io IFSM Tj Tstg Conditions Duty≦0.5 Direct Reverse Voltage 60Hz half sin wave, resistive load, IO/2 per diode, Tc= 130°C Max. 60Hz half sin wave, Non-repetitive at Ta=25°C, 1cycle, per diode - - Limits Unit 65 V 65 V 10 A 50 A 150 °C 55 to 150 °C Electrical and Thermal Characteristics (Tj= 25°C) Parameter Symbol Conditions Forward voltage Reverse current Thermal resistance VF IR1 IR2 Rth(j-c) IF=5A VR=60V VR=65V Junction to case Min. Typ. Max. Unit - 0.63 0.69 V - 5 40 μA - 10 70 μA - - 2 °C/W www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/4 2017.08 - Rev.B RBQ10T65ANZ Electrical Characteristic Curves Datasheet FORWARD CURRENT : IF(A) 100 Tj = 150°C 10 Tj = 125°C 1 Tj = 75°C 0.1 Tj = 25°C 0.01 0 Tj = 25°C 200 400 600 800 1000 1200 1400 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS REVERSE CURRENT : IR(μA) 100000 100...