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RBQ30NS45B Dataheets PDF



Part Number RBQ30NS45B
Manufacturers ROHM
Logo ROHM
Description Schottky Barrier Diode
Datasheet RBQ30NS45B DatasheetRBQ30NS45B Datasheet (PDF)

RBQ30NS45B Schottky Barrier Diode                                                   ●Outline VR 45 V Io 30 A IFSM 100 A ●Features High reliability Power mold type Low IR ●Inner Circuit Data sheet                         ●Application ●Packaging Specifications Switching power supply Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 24 ●Structure Quantity(pcs) 1000 Silicon epitaxial planar Taping Code TL Marking BQ30NS45B ●Absolute Maximum Ratings (Tc=25ºC unless otherwi.

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RBQ30NS45B Schottky Barrier Diode                                                   ●Outline VR 45 V Io 30 A IFSM 100 A ●Features High reliability Power mold type Low IR ●Inner Circuit Data sheet                         ●Application ●Packaging Specifications Switching power supply Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 24 ●Structure Quantity(pcs) 1000 Silicon epitaxial planar Taping Code TL Marking BQ30NS45B ●Absolute Maximum Ratings (Tc=25ºC unless otherwise specified) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 45 V Reverse voltage Average rectified forward current Peak forward surge current Junction temperature(1) VR Reverse direct voltage 45 V Io IFSM 60Hz half sin waveform,resistive load, Tc=100℃Max. 60Hz half sin waveform, non-repetitive,Ta=25℃ 30 100 A A Tj - 150 ℃ Storage temperature Tstg - Note(1) To avoid occurrence of thermal runaway, actual board is to be designed to fulfill dPd/dTj<1/RθJA. Attention -55 ~ 150 ℃ www.rohm.com © 2018- ROHMCo., Ltd.All rights reserved.                1/6   2019/05/27_Rev.003 RBQ30NS45B                                     Data sheet ●Electrical Characteristics Parameter Forward voltage Reverse current (Tj=25ºC unless otherwise specified) Symbol Conditions VF IF=30A IR VR=45V Min. Typ. Max. Unit - 0.53 0.59 V - 100 350 μA ●Thermal Characteristics                                                                   Parameter Symbol Min. Typ. Max. Unit Thermal Resistance (Junction to case)(1) (2) Thermal Resistance (Junction to ambient)(1) (3) Notes (1) Value is guaranteed by design.   RθJC - - 0.54 ℃/W   RθJA - - 55 ℃/W (2) Transient dual interface measurement (TDIM) method. (3) Mounted on 50 x 50 x 1.6mm FR4 board,single-sided copper,35μm thickness,reference footprint. ●Characteristic Curves                                                                            www.rohm.com © 2018- ROHMCo., Ltd.All rights reserved. 2/6 2019/05/27_Rev.003 RBQ30NS45B ●Characteristic Curves                                     Data sheet www.rohm.com © 2018- ROHMCo., Ltd.All rights reserved.              3/6 2019/05/27_Rev.003 RBQ30NS45B ●Characteristic Curves                                     Data sheet                                                                            www.rohm.com © 2018- ROHMCo., Ltd.All rights reserved. 4/6 2019/05/27_Rev.003 RBQ30NS45B ●Characteristic Curves                                     Data sheet                                                                            www.rohm.com © 2018- ROHMCo., Ltd.All rights reserved. 5/6 2019/05/27_Rev.003 RBQ30NS45B ●Dimensions                                     Data sheet TO-263S, [SC-83], (TO-263S) ●Taping (Unit:mm)                                                                            www.rohm.com © 2018- ROHMCo., Ltd.All rights reserved. 6/6 2019/05/27_Rev.003 Notice Precaution on using .


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