Schottky Barrier Diode
RBQ30T45ANZ
lApplication General rectification
lFeatures 1) Cathode common type. 2) Low IR 3) Hi...
Schottky Barrier Diode
RBQ30T45ANZ
lApplication General rectification
lFeatures 1) Cathode common type. 2) Low IR 3) High reliability
lConstruction Silicon epitaxial planar
lDimensions (Unit : mm)
10.0±0.3 0.1
4.5±0.3 0.1
2.8±0.2 0.1
5.0±0.2 8.0±0.2 12.0±0.2
13.5MIN 15.0±0.4 0.2
8.0
1
1.2
1.3 0.8
(1) (2) (3)
ROHM TO220FN 1 Manufacture Date
0.7±0.1 0.05
2.6±0.5
lPackage Dimensions (Unit : mm)
7 540
Anode Cathode Anode
Data Sheet lStructure
34.5
lAbsolute maximum ratings (Tc= 25°C)
Parameter
Symbol
Reverse voltage (repetitive) Reverse voltage (DC)
VRM VR
Average rectified forward current (*1)
Io
Forward current surge peak (60Hz・1cyc) Junction temperature
IFSM Tj
Storage temperature
Tstg
(*1) Rating of per diode : Io/2
Limits 45 45 30 100 150
-40 to +150
Unit V V A A °C °C
lElectrical characteristics (Tj = 25°C) Parameter
Forward voltage Reverse current
Symbol Min. VF IR -
Typ. Max. - 0.65 - 450
Unit Conditions ...
