Document
Schottky Barrier Diode
RBR10BM60A
lApplication Switching power supply
lDimensions (Unit : mm)
(2)
Data Sheet
lLand size figure (Unit : mm)
6.0
3.0 2.0 6.0
lFeatures 1) Cathode common dual type 2) High reliability 3) Low VF
1
(1)
2
(3)
ROHM : TO-252 JEITA : SC-63
1 : Manufacture date 2 : Serial number
lConstruction Silicon epitaxial planar type
lTaping Dimensions (Unit : mm)
1.6 1.6
TO-252
2.3 2.3
lStructure
(2) Cathode
(1) Anode (3) Anode
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Repetitive Peak Reverse Voltage Reverse Voltage Average Forward Rectified Current
Non-repetitive Forward Current Surge Peak
VRM VR Io IFSM
Operating Junction Temperature Storage Temperature
Tj Tstg
Conditions
Duty≦0.5
Direct Reverse Voltage
60Hz half sin Wave, resistive load, IO/2 per diode, Tc=95°C Max.
60Hz half sin wave, non-repetitive at Ta=25°C, 1cycle, per diode
-
-
Limits Unit 60 V 60 V 10 A 50 A 150 °C
-55 to +150 °C
lElectrical and Thermal Characteristics .