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RBR10T40ANZ Datasheet, Equivalent, Barrier Diode.Schottky Barrier Diode Schottky Barrier Diode |
| Part | RBR10T40ANZ |
|---|---|
| Description | Schottky Barrier Diode |
| Feature | Schottky Barrier Diode
RBR10T40ANZ
lApp lication Switching power supply
lDimen sions (Unit : mm)
4. 5±00. . 31 10. 0±00 . . 31 φ3. 2±0. 2 2. 8±00. . 21 Data She et lStructure 15. 0±00. . 24 12. 0±0. 2 lFeatures 1) Cathode common dual type 2) High reliability 3) Low VF 1. 2 1. 3 0. 8 1 5. 0±0. 2 8. 0±0. 2 2. 6±0. 5 14 . 0±0. 5 lConstruction Silicon epitaxia l planar type 2. 45±0. 5 2. 45±0. 5 (1) (2) (3) ROHM : TO220FN 0. 75±00. . 015 1 Manufacture date (1) (2) (3) Anode Cathode Anode lPackage Dimensions (Uni t : mm) 7 540 34. 5 lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Repetitive Peak Reverse Vol . |
| Manufacture | ROHM |
| Datasheet |
| Part | RBR10T40ANZ |
|---|---|
| Description | Schottky Barrier Diode |
| Feature | Schottky Barrier Diode
RBR10T40ANZ
lApp lication Switching power supply
lDimen sions (Unit : mm)
4. 5±00. . 31 10. 0±00 . . 31 φ3. 2±0. 2 2. 8±00. . 21 Data She et lStructure 15. 0±00. . 24 12. 0±0. 2 lFeatures 1) Cathode common dual type 2) High reliability 3) Low VF 1. 2 1. 3 0. 8 1 5. 0±0. 2 8. 0±0. 2 2. 6±0. 5 14 . 0±0. 5 lConstruction Silicon epitaxia l planar type 2. 45±0. 5 2. 45±0. 5 (1) (2) (3) ROHM : TO220FN 0. 75±00. . 015 1 Manufacture date (1) (2) (3) Anode Cathode Anode lPackage Dimensions (Uni t : mm) 7 540 34. 5 lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Repetitive Peak Reverse Vol . |
| Manufacture | ROHM |
| Datasheet |
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