MOSFET
www.vishay.com
Si1013CX
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.760 at ...
Description
www.vishay.com
Si1013CX
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.760 at VGS = -4.5 V
-20 1.040 at VGS = -2.5 V
1.500 at VGS = -1.8 V
ID (A) -0.45 -0.40 -0.32
Qg (TYP.) (nC) 1
SC-89 (3 leads)
D 3
1 G Top View
2 S
Marking Code: 6
Ordering Information:
Si1013CX-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES TrenchFET® power MOSFET
100 % Rg tested Typical ESD protection: 1000 V (HBM)
Fast switching speed
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS Load / power switch for portable
devices Drivers: relays, solenoids, displays Battery operated systems
G
S
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TA = 25 °C TA = 70 °C
ID
Pulsed Drain Current (t = 300 μs)
IDM
Continuous Source-Dr...
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