MOSFET
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Si3127DV
Vishay Siliconix
P-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) -60
RDS(on) (Ω) MAX. 0...
Description
www.vishay.com
Si3127DV
Vishay Siliconix
P-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) -60
RDS(on) (Ω) MAX. 0.089 at VGS = -10 V 0.146 at VGS = -4.5 V
ID (A) d -5.1 -4
TSOP-6 Single S 4
D 5 D 6
Qg (TYP.) 10.1 nC
FEATURES
TrenchFET® power MOSFET
100 % Rg and UIS tested
Material categorization: For definitions of compliance www.vishay.com/doc?99912
please
see
APPLICATIONS Load switches DC/DC converter
S
1 D Top View
2 D
3 G
Marking Code: BL
Ordering Information: Si3127DV-T1-GE3 (lead (Pb)-free and halogen-free)
G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 100 μs) Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
TC = ...
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