SI3443DV

P-Channel 2.5-V (G-S) MOSFET Si3443DV Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.065 @ VGS = –4.5 V –20 0.090 @ VGS = –2.7 V 0.100 @ VGS = –2.5 V ID (A) "4.4 "3.7 "3.5 3 mm TSOP-6 Top View 16 25 34 2.85 mm (4) S (3) G (1, 2, 5, 6) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS PD TJ, Tstg –20 "12 "4.4 "3.5 "20 –1.7 2.0 1.3 –55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta RthJA Notes a. Surface Mounted on FR4 Board, t v 5 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70713 S-54948—Rev. B,...