Document
www.vishay.com
Si7972DP
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET
PowerPAK® SO-8 Dual D1
D1 8 D2 7 D2 6
5
6.15 mm
1
Top View
5.15 mm
1
2 S1 3 G1 4 S2 G2 Bottom View
FEATURES • TrenchFET® power MOSFET • PWM optimized • Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS • System power DC/DC
D1 D2
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
ID (A) a Qg (TYP.)
60
0.018 at VGS = 10 V
8
0.021 at VGS = 4.5 V
8
7.1
Ordering Information: Si7972DP-T1-GE3 (lead (Pb)-free and halogen-free)
G1 G2
S1 N-Channel MOSFET
S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current Source-Drain Current Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d, e
TC = 25 °C TC = 70 °C TA = 25 °C .