SIHD14N60E

www.vishay.com SiHD14N60E Vishay Siliconix E Series Power MOSFET DPAK (TO-252) D GS D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 64 8 13 Single 0.269 FEATURES Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction losses Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Server and telecom power supplies Switch mode power supplies (SMPS) Power factor correction power supplies (PFC) Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting Industrial - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFORMATION Package Lead (Pb)-free and halogen-free DPAK (TO-252) SiHD14N60E-GE3 SiHD14N60ET1-GE3 SiHD14N60ET4-GE3 SiHD14N60ET5-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current a Linear derating factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Single pulse avalanche energy b Maximum power dissipation Operating junction and storage temperature range Drain-source voltage slope Reverse diode dV/dt d TJ = 125 °C EAS PD TJ, Tstg dV/dt Soldering recommendations (peak temperature) ...