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SiHG47N60EF
Vishay Siliconix
EF Series Power MOSFET with Fast Body Diode
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. at 25 °C () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
650 VGS = 10 V
228 32 62 Single
0.065
TO-247AC
D
G
S
D G
S N-Channel MOSFET
FEATURES
• Fast body diode MOSFET using E series technology
• Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Increased robustness due to low Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Telecommunications - Server and telecom power supplies
• Lighting - High-intensity lighting (HID) - Light emitting diodes (LEDs)
• Consumer and computing - ATX power supplies
• Industrial - Welding - Battery chargers
• Renewable energy - Solar (PV inverters)
• Switching mode power supplies (SMP.