Power Rectifier. NRVBB30H60CTT4G Datasheet

NRVBB30H60CTT4G Rectifier. Datasheet pdf. Equivalent

NRVBB30H60CTT4G Datasheet
Recommendation NRVBB30H60CTT4G Datasheet
Part NRVBB30H60CTT4G
Description SWITCHMODE Power Rectifier
Feature NRVBB30H60CTT4G; MBRB30H60CT-1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G, NRVBB30H60CTT4G, MBRJ30H60CTG SWITCHMODE .
Manufacture ON Semiconductor
Datasheet
Download NRVBB30H60CTT4G Datasheet




ON Semiconductor NRVBB30H60CTT4G
MBRB30H60CT-1G,
MBR30H60CTG,
MBRF30H60CTG,
MBRB30H60CTT4G,
NRVBB30H60CTT4G,
MBRJ30H60CTG
SWITCHMODE
Power Rectifier
60 V, 30 A
Features and Benefits
Low Forward Voltage
Low Power Loss/High Efficiency
High Surge Capacity
175C Operating Junction Temperature
30 A Total (15 A Per Diode Leg)
GuardRing for Stress Protection
AECQ101 Qualified and PPAP Capable
NRVBB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These are PbFree Devices*
Applications
Power Supply Output Rectification
Power Management
Instrumentation
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets UL 94 V0 @ 0.125 in
Weight (Approximately): 1.5 Grams (I2PAK)
Weight (Approximately): 1.7 Grams (D2PAK)
Weight (Approximately): 1.9 Grams (TO220 and TO220FP)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260C Max. for 10 Seconds
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SCHOTTKY BARRIER
RECTIFIERS
30 AMPERES, 60 VOLTS
1
2, 4
3
4
4
1 23
I2PAK (TO262)
CASE 418D
PLASTIC
STYLE 3
12 3
TO220
CASE 221A
PLASTIC
STYLE 6
TO220
CASE 221D
STYLE 3
TO220
CASE 221AH
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
January, 2012 Rev. 10
1
D2PAK
CASE 418B
ORDERING AND MARKING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
MBRB30H60CT/D



ON Semiconductor NRVBB30H60CTT4G
MBRB30H60CT1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G,
NRVBB30H60CTT4G, MBRJ30H60CTG
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC = 159C
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
60
15
30
260
V
A
A
A
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated VR)
Controlled Avalanche Energy (see test conditions in Figures 11 and 12)
ESD Ratings:
Machine Model = C
Human Body Model = 3B
TJ
Tstg
dv/dt
WAVAL
55 to +175
*55 to +175
10,000
350
> 400
> 8000
C
C
V/ms
mJ
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance
(MBRB30H60CT1G and MBR30H60CTG)
JunctiontoCase
JunctiontoAmbient
(MBRF30H60CTG and MBRJ30H60CTG)
JunctiontoCase
(MBRB30H60CTT4G and NRVBB30H60CTT4G)
JunctiontoCase
Symbol
RRqqJJCA
RqJC
RqJC
Value
2.0
70
4.4
1.6
Unit
C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 15 A, TC = 25C)
(IF = 15 A, TC = 125C)
(IF = 30 A, TC = 25C)
(IF = 30 A, TC = 125C)
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC = 25C)
(Rated DC Voltage, TC = 125C)
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
Symbol
vF
iR
Value
0.62
0.56
0.78
0.71
0.3
45
Unit
V
mA
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ON Semiconductor NRVBB30H60CTT4G
MBRB30H60CT1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G,
NRVBB30H60CTT4G, MBRJ30H60CTG
100 100
TJ = 125C
10
TJ = 125C
10
TJ = 25C
1
TJ = 25C
1
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Forward Voltage
1.0E01
1.0E01
1.0E02
1.0E03
TJ = 125C
1.0E02
1.0E03
TJ = 125C
1.0E04
1.0E05
TJ = 25C
1.0E04
1.0E05
TJ = 25C
1.0E06
0
10 20 30 40 50
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
1.0E06
60 0
30
25 dc
20 SQUARE WAVE
15
10
5
0
100 110 120 130 140 150 160 170 180
TC, CASE TEMPERATURE (C)
Figure 5. Current Derating for
MBRB30H60CT1G, MBR30H60CTG,
MBRB30H60CTT4G and NRVBB30H60CTT4G
20
18
16
14
12
10
8
6
4
2
0
0
10 20 30 40 50
VR, REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Current
60
SQUARE
DC
5 10 15 20
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 6. Forward Power Dissipation
25
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