Power Rectifier. SBRS8130LT3G Datasheet

SBRS8130LT3G Rectifier. Datasheet pdf. Equivalent

SBRS8130LT3G Datasheet
Recommendation SBRS8130LT3G Datasheet
Part SBRS8130LT3G
Description Schottky Power Rectifier
Feature SBRS8130LT3G; Schottky Power Rectifier Surface Mount Power Package MBRS130LT3G, SBRS8130LT3G, SBRS8130LN This dev.
Manufacture ON Semiconductor
Datasheet
Download SBRS8130LT3G Datasheet




ON Semiconductor SBRS8130LT3G
Schottky Power Rectifier
Surface Mount Power Package
MBRS130LT3G,
SBRS8130LT3G,
SBRS8130LN
This device employs the Schottky Barrier principle in a large area
metaltosilicon power diode. Stateoftheart geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification,
or as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the
system.
Features
Very Low Forward Voltage Drop (0.395 Volts Max @ 1.0 A, TJ = 25°C)
Small Compact Surface Mountable Package with JBend Leads
Highly Stable Oxide Passivated Junction
GuardRing for Stress Protection
ESD Ratings:
Human Body Model = 3B (> 16000 V)
Machine Model = C (> 400 V)
SBRS8 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable*
These are PbFree Devices
Mechanical Characteristics
Case: Epoxy, Molded
Weight: 100 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Cathode Polarity Band
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SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE
30 VOLTS
SMB
CASE 403A
MARKING DIAGRAM
AYWW
1BL3G
G
1BL3
A
Y
WW
G
= Specific Device Code
= Assembly Location**
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
**The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter pin),
the front side assembly code may be blank.
ORDERING INFORMATION
Device
Package Shipping
MBRS130LT3G
SMB
2,500 /
(PbFree) Tape & Reel
SBRS8130LT3G*
SMB
2,500 /
(PbFree) Tape & Reel
SBRS8130LT3GVF01* SMB
2,500 /
(PbFree) Tape & Reel
SBRS8130LNT3G*
SMB
2,500 /
(PbFree) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
December, 2019 Rev. 11
1
Publication Order Number:
MBRS130LT3/D



ON Semiconductor SBRS8130LT3G
MBRS130LT3G, SBRS8130LT3G, SBRS8130LN
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
TL = 120°C
TL = 110°C
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFSM
30
1.0
2.0
40
V
A
A
Operating Junction Temperature
TJ 65 to +125 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
JunctiontoLead
Thermal Resistance,
JunctiontoAmbient (TA = 25°C, Min Pad, 1 oz copper)
JunctiontoAmbient (TA = 25°C, 1” Pad, 1 oz copper)
Symbol
YJL
RqJA
Value
12
228.8
71.3
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 1.0 A, TJ = 25°C)
(iF = 2.0 A, TJ = 25°C)
VF
0.395
0.445
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 100°C)
IR mA
1.0
10
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%.
10 10
TJ = 100°C
1
25°C
0.1
0.0
0.1 0.2 0.3 0.4 0.5 0.6
VF, INSTANTANEOUS VOLTAGE (V)
Figure 1. Typical Forward Voltage
0.7
1 TJ = 100°C
25°C
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
VF, MAXIMUM INSTANTANEOUS VOLTAGE (V)
Figure 2. Maximum Forward Voltage
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ON Semiconductor SBRS8130LT3G
MBRS130LT3G, SBRS8130LT3G, SBRS8130LN
100
10
1.0 TJ = 100°C
0.1 25°C
0.01
0.001
0
3 6 9 12 15 18 21 24 27 30
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Leakage Current
100
10 TJ = 100°C
1.0 25°C
0.1
0.01
0.001
0 3 6 9 12 15 18 21 24 27 30
VR, REVERSE VOLTAGE (V)
Figure 4. Typical Maximum Reverse Leakage
Curent
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
100
DC
SQUARE WAVE
105 110 115 120 125
TC, CASE TEMPERATURE (°C)
Figure 5. Current Derating (Case)
130
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
SQUARE
DC
0.2 0.4 0.6 0.8 1
1.2 1.4 1.6
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 6. Typical Power Dissipation
400
350
300
250
200
150
100
50
0
0
NOTE: TYPICAL CAPACITANCE
AT 0 V = 290 pF
4 8 12 16 20 24 28
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Typical Capacitance
32
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