SBRS8130LT3G

Schottky Power Rectifier Surface Mount Power Package MBRS130LT3G, SBRS8130LT3G, SBRS8130LN This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. Features Very Low Forward Voltage Drop (0.395 Volts Max @ 1.0 A, TJ = 25°C) Small Compact Surface Mountable Package with J−Bend Leads Highly Stable Oxide Passivated Junction Guard−Ring for Stress Protection ESD Ratings: ♦ Human Body Model = 3B (> 16000 V) ♦ Machine Model = C (> 400 V) SBRS8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* These are Pb−Free Devices Mechanical Characteristics Case: Epoxy, Molded Weight: 100 mg (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Cathode Polarity Band www.onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 30 VOLTS SMB CASE 403A MARKING DIAGRAM AYWW 1BL3G G 1BL3 A Y WW G = Specific Device Code = Assembly Location** = Year = Work Week = Pb−Free Package (Note: Microdot may be in either lo...