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NRVBS260T3G Dataheets PDF



Part Number NRVBS260T3G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Surface Mount Schottky Power Rectifier
Datasheet NRVBS260T3G DatasheetNRVBS260T3G Datasheet (PDF)

Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package MBRS260T3G, NRVBS260N, NRVBS260T3G, SRVBS260N This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features • Compact Package with J−Bend Leads Ideal for Automated Handling • Highly S.

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Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package MBRS260T3G, NRVBS260N, NRVBS260T3G, SRVBS260N This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features • Compact Package with J−Bend Leads Ideal for Automated Handling • Highly Stable Oxide Passivated Junction • Guard−Ring for Over−Voltage Protection • Low Forward Voltage Drop • NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* • These are Pb−Free Devices Mechanical Characteristics • Case: Molded Epoxy • Epoxy Meets UL 94 V−0 @ 0.125 in • Weight: 95 mg (Approximately) • Cathode Polarity Band • Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • ESD Ratings: ♦ Machine Model = C ♦ Human Body Model = 3B www.onsemi.com SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 60 VOLTS SMB CASE 403A MARKING DIAGRAM AYWW B26G G B26 = Specific Device Code A = Assembly Location** Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ORDERING INFORMATION Device MBRS260T3G NRVBS260T3G* NRVBS260T3G−VF01* NRVBS260NT3G* SRVBS260NT3G* Package SMB (Pb−Free) Shipping† 2,500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 February, 2020 − Rev. 10 1 Publication Order Number: MBRS260T3/D MBRS260T3G, NRVBS260N, NRVBS260T3G, SRVBS260N MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TL = 95°C) Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Symbol VRRM VRWM VR IO IFSM Value 60 2.0 60 Unit V A A Storage Temperature Range Tstg −55 to +150 °C Operating Junction Temperature TJ −55 to +125 °C Voltage Rate of Change (Rated VR, TJ = 25°C) dv/dt 10,000 V/ms Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead (Note 1) Thermal Resistance, Junction−to−Ambient (Note 2) 1. Mounted with minimum recommended pad size, PC Board FR4. 2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. Symbol RRqqJJAL Value 24 80 Unit °C/W ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 3) Symbol vF Value TJ = 25°C TJ = 125°C Unit V (iF = 1.0 A) (iF = 2.0 A) Maximum Instantaneous Reverse Current (Note 3) 0.51 0.475 0.63 0.55 IR TJ = 25°C TJ = 125°C mA (VR = 60 V) 0.2 20 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 IF, INSTANTANEOUS FORWARD CURRENT (A) IR, REVERSE CURRENT (A) MBRS260T3G, NRVBS260N, NRVBS260T3G, SRVBS260N TYPICAL CHARACTERISTICS 10 10 IF, INSTANTANEOUS FORWARD CURRENT (A) TA = 125°C TA = 150°C 1 TA = 75°C TA = 25°C TA = −40°C 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage 0.8 1 TA = 125°C TA = 75°C TA = 150°C TA = 25°C TA = −40°C 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 2. Maximum Forward Voltage 0.8 1.0E−01 1.0E−02 1.0E−03 1.0E−04 1.0E−05 1.0E−06 1.0E−07 0 C, CAPACITANCE (pF) TA = 150°C TA = 125°C TA = 75°C TA = 25°C 100 25°C f = 1 MHz 10 20 30 40 50 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current 10 60 0 10 20 30 40 50 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Typical Capacitance 60 3.5 3 dc RqJL = 24°C/W 2.5 2 1.5 SQUARE WAVE 1 0.5 0 60 70 80 90 100 110 120 130 140 150 TL, LEAD TEMPERATURE (°C) Figure 5. Current Derating − Junction to Lead PFO, AVERAGE POWER DISSIPATION (W) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 SQUARE WAVE dc 0.5 1 1.5 2 2.5 IO, AVERAGE FORWARD CURRENT (AMPS) Figure 6. F.


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