Power Rectifier. NRVBS260T3G Datasheet

NRVBS260T3G Rectifier. Datasheet pdf. Equivalent

NRVBS260T3G Datasheet
Recommendation NRVBS260T3G Datasheet
Part NRVBS260T3G
Description Surface Mount Schottky Power Rectifier
Feature NRVBS260T3G; Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package MBRS260T3G, NRVBS260N, NRVBS.
Manufacture ON Semiconductor
Datasheet
Download NRVBS260T3G Datasheet




ON Semiconductor NRVBS260T3G
Surface Mount
Schottky Power Rectifier
SMB Power Surface Mount Package
MBRS260T3G, NRVBS260N,
NRVBS260T3G, SRVBS260N
This device employs the Schottky Barrier principle in a
metaltosilicon power rectifier. Features epitaxial construction with
oxide passivation and metal overlay contact. Ideally suited for low
voltage, high frequency switching power supplies; free wheeling
diodes and polarity protection diodes.
Features
Compact Package with JBend Leads Ideal for Automated Handling
Highly Stable Oxide Passivated Junction
GuardRing for OverVoltage Protection
Low Forward Voltage Drop
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable*
These are PbFree Devices
Mechanical Characteristics
Case: Molded Epoxy
Epoxy Meets UL 94 V0 @ 0.125 in
Weight: 95 mg (Approximately)
Cathode Polarity Band
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
ESD Ratings:
Machine Model = C
Human Body Model = 3B
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SCHOTTKY BARRIER
RECTIFIER
2.0 AMPERES, 60 VOLTS
SMB
CASE 403A
MARKING DIAGRAM
AYWW
B26G
G
B26 = Specific Device Code
A = Assembly Location**
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
**The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter pin),
the front side assembly code may be blank.
ORDERING INFORMATION
Device
MBRS260T3G
NRVBS260T3G*
NRVBS260T3GVF01*
NRVBS260NT3G*
SRVBS260NT3G*
Package
SMB
(PbFree)
Shipping
2,500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
February, 2020 Rev. 10
1
Publication Order Number:
MBRS260T3/D



ON Semiconductor NRVBS260T3G
MBRS260T3G, NRVBS260N, NRVBS260T3G, SRVBS260N
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TL = 95°C)
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Symbol
VRRM
VRWM
VR
IO
IFSM
Value
60
2.0
60
Unit
V
A
A
Storage Temperature Range
Tstg 55 to +150
°C
Operating Junction Temperature
TJ 55 to +125 °C
Voltage Rate of Change
(Rated VR, TJ = 25°C)
dv/dt
10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, JunctiontoLead (Note 1)
Thermal Resistance, JunctiontoAmbient (Note 2)
1. Mounted with minimum recommended pad size, PC Board FR4.
2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
Symbol
RRqqJJAL
Value
24
80
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 3)
Symbol
vF
Value
TJ = 25°C
TJ = 125°C
Unit
V
(iF = 1.0 A)
(iF = 2.0 A)
Maximum Instantaneous Reverse Current (Note 3)
0.51 0.475
0.63 0.55
IR
TJ = 25°C
TJ = 125°C
mA
(VR = 60 V)
0.2 20
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width 250 ms, Duty Cycle 2.0%.
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ON Semiconductor NRVBS260T3G
MBRS260T3G, NRVBS260N, NRVBS260T3G, SRVBS260N
TYPICAL CHARACTERISTICS
10 10
TA = 125°C
TA = 150°C
1
TA = 75°C
TA = 25°C
TA = 40°C
0.1
0.0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
0.8
1 TA = 125°C
TA = 75°C
TA = 150°C
TA = 25°C
TA = 40°C
0.1
0.0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Forward Voltage
0.8
1.0E01
1.0E02
1.0E03
1.0E04
1.0E05
1.0E06
1.0E07
0
TA = 150°C
TA = 125°C
TA = 75°C
TA = 25°C
100
25°C
f = 1 MHz
10 20 30 40 50
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
10
60 0
10 20 30 40 50
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Typical Capacitance
60
3.5
3 dc
RqJL = 24°C/W
2.5
2
1.5 SQUARE WAVE
1
0.5
0
60 70 80 90 100 110 120 130 140 150
TL, LEAD TEMPERATURE (°C)
Figure 5. Current Derating Junction to Lead
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
SQUARE WAVE
dc
0.5 1 1.5 2 2.5
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 6. Forward Power Dissipation
3
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