Document
Surface Mount Schottky Power Rectifier
SMB Power Surface Mount Package
MBRS260T3G, NRVBS260N, NRVBS260T3G, SRVBS260N
This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes.
Features
• Compact Package with J−Bend Leads Ideal for Automated Handling • Highly Stable Oxide Passivated Junction • Guard−Ring for Over−Voltage Protection • Low Forward Voltage Drop • NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable*
• These are Pb−Free Devices
Mechanical Characteristics
• Case: Molded Epoxy • Epoxy Meets UL 94 V−0 @ 0.125 in • Weight: 95 mg (Approximately) • Cathode Polarity Band • Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• ESD Ratings:
♦ Machine Model = C ♦ Human Body Model = 3B
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SCHOTTKY BARRIER RECTIFIER
2.0 AMPERES, 60 VOLTS
SMB CASE 403A
MARKING DIAGRAM
AYWW B26G
G
B26 = Specific Device Code A = Assembly Location** Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank.
ORDERING INFORMATION
Device MBRS260T3G NRVBS260T3G* NRVBS260T3G−VF01* NRVBS260NT3G* SRVBS260NT3G*
Package SMB
(Pb−Free)
Shipping† 2,500 /
Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
February, 2020 − Rev. 10
1
Publication Order Number: MBRS260T3/D
MBRS260T3G, NRVBS260N, NRVBS260T3G, SRVBS260N
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Average Rectified Forward Current (At Rated VR, TL = 95°C)
Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Symbol VRRM VRWM VR IO
IFSM
Value 60
2.0 60
Unit V
A A
Storage Temperature Range
Tstg −55 to +150
°C
Operating Junction Temperature
TJ −55 to +125 °C
Voltage Rate of Change (Rated VR, TJ = 25°C)
dv/dt
10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS Characteristic
Thermal Resistance, Junction−to−Lead (Note 1) Thermal Resistance, Junction−to−Ambient (Note 2) 1. Mounted with minimum recommended pad size, PC Board FR4. 2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
Symbol RRqqJJAL
Value 24 80
Unit °C/W
ELECTRICAL CHARACTERISTICS
Characteristic Maximum Instantaneous Forward Voltage (Note 3)
Symbol vF
Value
TJ = 25°C
TJ = 125°C
Unit V
(iF = 1.0 A) (iF = 2.0 A) Maximum Instantaneous Reverse Current (Note 3)
0.51 0.475 0.63 0.55
IR
TJ = 25°C
TJ = 125°C
mA
(VR = 60 V)
0.2 20
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%.
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IF, INSTANTANEOUS FORWARD CURRENT (A)
IR, REVERSE CURRENT (A)
MBRS260T3G, NRVBS260N, NRVBS260T3G, SRVBS260N
TYPICAL CHARACTERISTICS
10 10
IF, INSTANTANEOUS FORWARD CURRENT (A)
TA = 125°C
TA = 150°C
1 TA = 75°C
TA = 25°C
TA = −40°C
0.1 0.0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
0.8
1 TA = 125°C TA = 75°C
TA = 150°C
TA = 25°C
TA = −40°C
0.1 0.0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Forward Voltage
0.8
1.0E−01 1.0E−02 1.0E−03 1.0E−04 1.0E−05 1.0E−06 1.0E−07
0
C, CAPACITANCE (pF)
TA = 150°C TA = 125°C
TA = 75°C
TA = 25°C
100
25°C f = 1 MHz
10 20 30 40 50 VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
10 60 0
10 20 30 40 50
VR, REVERSE VOLTAGE (VOLTS) Figure 4. Typical Capacitance
60
3.5 3 dc
RqJL = 24°C/W
2.5
2 1.5 SQUARE WAVE
1
0.5
0 60 70 80 90 100 110 120 130 140 150 TL, LEAD TEMPERATURE (°C) Figure 5. Current Derating − Junction to Lead
PFO, AVERAGE POWER DISSIPATION (W)
2 1.8 1.6 1.4 1.2
1 0.8 0.6 0.4 0.2
0 0
SQUARE WAVE
dc
0.5 1 1.5 2 2.5
IO, AVERAGE FORWARD CURRENT (AMPS) Figure 6. F.