Document
MSB92ASWT1G, MSB92AS1WT1G
PNP Silicon General Purpose High Voltage Transistor
This PNP Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications.
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current − Continuous Electrostatic Discharge
V(BR)CBO V(BR)CEO V(BR)EBO
IC ESD
−300 −300 −5.0 500 HBMu16,000, MMu2,000
Vdc Vdc Vdc mAdc
V
THERMAL CHARACTERISTICS
Rating
Symbol Max Unit
Power Dissipation (Note 1)
PD
150 mW
Junction Temperature
TJ 150 °C
Storage Temperature Range
Tstg
−55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is.