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MSB92ASWT1G Dataheets PDF



Part Number MSB92ASWT1G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description PNP Silicon General Purpose High Voltage Transistor
Datasheet MSB92ASWT1G DatasheetMSB92ASWT1G Datasheet (PDF)

MSB92ASWT1G, MSB92AS1WT1G PNP Silicon General Purpose High Voltage Transistor This PNP Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collect.

  MSB92ASWT1G   MSB92ASWT1G


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MSB92ASWT1G, MSB92AS1WT1G PNP Silicon General Purpose High Voltage Transistor This PNP Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current − Continuous Electrostatic Discharge V(BR)CBO V(BR)CEO V(BR)EBO IC ESD −300 −300 −5.0 500 HBMu16,000, MMu2,000 Vdc Vdc Vdc mAdc V THERMAL CHARACTERISTICS Rating Symbol Max Unit Power Dissipation (Note 1) PD 150 mW Junction Temperature TJ 150 °C Storage Temperature Range Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is.


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