MSB92ASWT1

MSB92ASWT1 Preferred Device PNP Silicon General Purpose High Voltage Transistor This PNP Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. MAXIMUM RATINGS (TA = 25°C) Rating Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Electrostatic Discharge V(BR)CBO V(BR)CEO V(BR)EBO IC ESD Value -300 -300 -5.0 500 MBMu16,000, MMu2,000 Unit Vdc Vdc Vdc mAdc V THERMAL CHARACTERISTICS Rating Symbol Max Unit Power Dissipation (Note 1.) PD 150 mW Junction Temperature TJ 150 °C Storage Temperature Range Tstg - 55 ~ + 150 °C 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER 3 1 2 SC-70/SOT-323 CASE 419 STYLE 3 MARKING DIAGRAM D3 M D3 = Specific Device Code M = Date Code ORDER...