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Purpose Transistor. NST3904DXV6T1G Datasheet |
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Dual General Purpose
Transistor
NST3904DXV6T1G,
NSVT3904DXV6T1G,
NST3904DXV6T5G
The NST/NSV3904DXV6 device is a spin−off of our popular
SOT−23/SOT−323 three−leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT−563
six−leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low−power surface mount
applications where board space is at a premium.
Features
• hFE, 100−300
• Low VCE(sat), ≤ 0.4 V
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• AEC−Q101 Qualified and PPAP Capable − NSVT3904DXV6T1G
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Electrostatic Discharge
HBM
MM
VCEO
VCBO
VEBO
IC
ESD
40
60
6.0
200
>16000
>2000
Vdc
Vdc
Vdc
mAdc
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
(3) (2) (1)
Q1 Q2
(4) (5)
(6)
NST/NSV3904DXV6
MARKING
DIAGRAM
SOT−563
CASE 463A
MA M G
1
STYLE 1
G
1
MA = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package Shipping†
NST3904DXV6T1G SOT−563
(Pb−Free)
4000/Tape &
Reel
NSVT3904DXV6T1G SOT−563
(Pb−Free)
4000/Tape &
Reel
NST3904DXV6T5G SOT−563
(Pb−Free)
8000/Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
April, 2020 − Rev. 8
1
Publication Order Number:
NST3904DXV6T1/D
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NST3904DXV6T1G, NSVT3904DXV6T1G, NST3904DXV6T5G
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation TA = 25°C
Derate above 25°C (Note 1)
Thermal Resistance Junction-to-Ambient (Note 1)
Characteristic
(Both Junctions Heated)
Total Device Dissipation TA = 25°C
Derate above 25°C (Note 1)
Thermal Resistance, Junction-to-Ambient (Note 1)
Junction and Storage Temperature Range
1. FR−4 @ Minimum Pad
Symbol
PD
RqJA
Symbol
PD
RqJA
TJ, Tstg
Max
357
2.9
350
Max
500
4.0
250
−55 to +150
Unit
mW
mW/°C
°C/W
Unit
mW
mW/°C
°C/W
°C
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NST3904DXV6T1G, NSVT3904DXV6T1G, NST3904DXV6T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0)
Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Small −Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k W, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 3.0 Vdc, VBE = − 0.5 Vdc)
Rise Time
Storage Time
(IC = 10 mAdc, IB1 = 1.0 mAdc)
(VCC = 3.0 Vdc, IC = 10 mAdc)
Fall Time
(IB1 = IB2 = 1.0 mAdc)
2. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%.
Symbol
Min Max Unit
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
hFE
VCE(sat)
VBE(sat)
40 − Vdc
60 − Vdc
6.0 − Vdc
− 50 nAdc
− 50 nAdc
40 −
70 −
100 300
60 −
30 −
−
Vdc
− 0.2
− 0.3
Vdc
0.65 0.85
− 0.95
fT
Cobo
Cibo
hie
hre
hfe
hoe
NF
300 − MHz
− 4.0 pF
− 8.0 pF
1.0 10 k W
2.0 12
0.5 8.0 X 10− 4
0.1 10
100 400
100 400
−
1.0 40 mmhos
3.0 60
− 5.0 dB
− 4.0
td
tr
− 35
ns
− 35
ts
− 200
ns
tf − 50
DUTY CYCLE = 2%
300 ns
+10.9 V
10 k
+3 V
275
10 < t1 < 500 ms
DUTY CYCLE = 2%
t1
0
+10.9 V
10 k
+3 V
275
- 0.5 V
< 1 ns
Cs < 4 pF*
1N916
Cs < 4 pF*
- 9.1 V′
< 1 ns
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time Equivalent Test Circuit
Figure 2. Storage and Fall Time Equivalent Test Circuit
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