Purpose Transistor. NST3904DXV6T5G Datasheet

NST3904DXV6T5G Transistor. Datasheet pdf. Equivalent

NST3904DXV6T5G Datasheet
Recommendation NST3904DXV6T5G Datasheet
Part NST3904DXV6T5G
Description Dual General Purpose Transistor
Feature NST3904DXV6T5G; Dual General Purpose Transistor NST3904DXV6T1G, NSVT3904DXV6T1G, NST3904DXV6T5G The NST/NSV3904DXV6.
Manufacture ON Semiconductor
Datasheet
Download NST3904DXV6T5G Datasheet




ON Semiconductor NST3904DXV6T5G
Dual General Purpose
Transistor
NST3904DXV6T1G,
NSVT3904DXV6T1G,
NST3904DXV6T5G
The NST/NSV3904DXV6 device is a spinoff of our popular
SOT23/SOT323 threeleaded device. It is designed for general
purpose amplifier applications and is housed in the SOT563
sixleaded surface mount package. By putting two discrete devices in
one package, this device is ideal for lowpower surface mount
applications where board space is at a premium.
Features
hFE, 100300
Low VCE(sat), 0.4 V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
AECQ101 Qualified and PPAP Capable NSVT3904DXV6T1G
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Electrostatic Discharge
HBM
MM
VCEO
VCBO
VEBO
IC
ESD
40
60
6.0
200
>16000
>2000
Vdc
Vdc
Vdc
mAdc
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
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(3) (2) (1)
Q1 Q2
(4) (5)
(6)
NST/NSV3904DXV6
MARKING
DIAGRAM
SOT563
CASE 463A
MA M G
1
STYLE 1
G
1
MA = Device Code
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package Shipping
NST3904DXV6T1G SOT563
(PbFree)
4000/Tape &
Reel
NSVT3904DXV6T1G SOT563
(PbFree)
4000/Tape &
Reel
NST3904DXV6T5G SOT563
(PbFree)
8000/Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
April, 2020 Rev. 8
1
Publication Order Number:
NST3904DXV6T1/D



ON Semiconductor NST3904DXV6T5G
NST3904DXV6T1G, NSVT3904DXV6T1G, NST3904DXV6T5G
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation TA = 25°C
Derate above 25°C (Note 1)
Thermal Resistance Junction-to-Ambient (Note 1)
Characteristic
(Both Junctions Heated)
Total Device Dissipation TA = 25°C
Derate above 25°C (Note 1)
Thermal Resistance, Junction-to-Ambient (Note 1)
Junction and Storage Temperature Range
1. FR4 @ Minimum Pad
Symbol
PD
RqJA
Symbol
PD
RqJA
TJ, Tstg
Max
357
2.9
350
Max
500
4.0
250
55 to +150
Unit
mW
mW/°C
°C/W
Unit
mW
mW/°C
°C/W
°C
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ON Semiconductor NST3904DXV6T5G
NST3904DXV6T1G, NSVT3904DXV6T1G, NST3904DXV6T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0)
Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
Collector Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALLSIGNAL CHARACTERISTICS
Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Small Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k W, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 3.0 Vdc, VBE = 0.5 Vdc)
Rise Time
Storage Time
(IC = 10 mAdc, IB1 = 1.0 mAdc)
(VCC = 3.0 Vdc, IC = 10 mAdc)
Fall Time
(IB1 = IB2 = 1.0 mAdc)
2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
Symbol
Min Max Unit
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
hFE
VCE(sat)
VBE(sat)
40 Vdc
60 Vdc
6.0 Vdc
50 nAdc
50 nAdc
40
70
100 300
60
30
Vdc
0.2
0.3
Vdc
0.65 0.85
0.95
fT
Cobo
Cibo
hie
hre
hfe
hoe
NF
300 MHz
4.0 pF
8.0 pF
1.0 10 k W
2.0 12
0.5 8.0 X 104
0.1 10
100 400
100 400
1.0 40 mmhos
3.0 60
5.0 dB
4.0
td
tr
35
ns
35
ts
200
ns
tf 50
DUTY CYCLE = 2%
300 ns
+10.9 V
10 k
+3 V
275
10 < t1 < 500 ms
DUTY CYCLE = 2%
t1
0
+10.9 V
10 k
+3 V
275
- 0.5 V
< 1 ns
Cs < 4 pF*
1N916
Cs < 4 pF*
- 9.1 V
< 1 ns
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time Equivalent Test Circuit
Figure 2. Storage and Fall Time Equivalent Test Circuit
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