Purpose Transistor. NST3904DP6T5G Datasheet

NST3904DP6T5G Transistor. Datasheet pdf. Equivalent

NST3904DP6T5G Datasheet
Recommendation NST3904DP6T5G Datasheet
Part NST3904DP6T5G
Description Dual General Purpose Transistor
Feature NST3904DP6T5G; NST3904DP6T5G Dual General Purpose Transistor The NST3904DP6T5G device is a spin−off of our popular.
Manufacture ON Semiconductor
Datasheet
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ON Semiconductor NST3904DP6T5G
NST3904DP6T5G
Dual General Purpose
Transistor
The NST3904DP6T5G device is a spin−off of our popular
SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for
general purpose amplifier applications and is housed in the SOT−963
six−leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low−power surface mount
applications where board space is at a premium.
Features
hFE, 100−300
Low VCE(sat), 0.4 V
Reduces Board Space and Component Count
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free and are RoHS Compliant
MAXIMUM RATINGS
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(3) (2) (1)
Q1 Q2
(4) (5)
(6)
NST3904DP6T5G
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Electrostatic Discharge
Symbol
HBM
MM
VCEO
VCBO
VEBO
IC
ESD
Class
Value
40
60
6.0
200
2
B
Unit
Vdc
Vdc
Vdc
mAdc
65 4
12 3
SOT−963
CASE 527AD
THERMAL CHARACTERISTICS
Characteristic (Single Heated)
Total Device Dissipation TA = 25°C
Derate above 25°C (Note 1)
Symbol
PD
Max
240
1.9
Unit
mW
mW/°C
Thermal Resistance, Junction-to-Ambient
(Note 1)
RqJA
520 °C/W
Total Device Dissipation TA = 25°C
Derate above 25°C (Note 2)
PD 280 mW
2.2 mW/°C
Thermal Resistance, Junction-to-Ambient
(Note 2)
RqJA
446 °C/W
MARKING DIAGRAM
EMG
G
1
E = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
Characteristic (Dual Heated) (Note 3)
Total Device Dissipation TA = 25°C
Derate above 25°C (Note 1)
Thermal Resistance, Junction-to-Ambient
(Note 1)
Total Device Dissipation TA = 25°C
Derate above 25°C (Note 2)
Symbol
PD
RqJA
PD
Max
350
2.8
357
420
3.4
Unit
mW
mW/°C
°C/W
mW
mW/°C
ORDERING INFORMATION
Device
Package
Shipping
NST3904DP6T5G SOT−963 8000/Tape & Reel
(Pb−Free)
NSVT3904DP6T5G SOT−963 8000/Tape & Reel
(Pb−Free)
Thermal Resistance, Junction-to-Ambient
(Note 2)
Junction and Storage Temperature Range
RqJA
TJ, Tstg
297
−55 to
+150
°C/W
°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ 100 mm2, 1 oz. copper traces, still air.
2. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
3. Dual heated values assume total power is sum of two equally powered channels.
© Semiconductor Components Industries, LLC, 2014
June, 2014 − Rev. 1
1
Publication Order Number:
NST3904DP6/D



ON Semiconductor NST3904DP6T5G
NST3904DP6T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 4) (IC = 1.0 mAdc, IB = 0)
Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)
ON CHARACTERISTICS (Note 4)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k W, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 3.0 Vdc, VBE = − 0.5 Vdc)
Rise Time
(IC = 10 mAdc, IB1 = 1.0 mAdc)
Storage Time
(VCC = 3.0 Vdc, IC = 10 mAdc)
Fall Time
(IB1 = IB2 = 1.0 mAdc)
4. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
hFE
VCE(sat)
VBE(sat)
fT
Cobo
Cibo
NF
td
tr
ts
tf
Min
40
60
6.0
40
70
100
60
30
0.65
200
Max Unit
− Vdc
− Vdc
− Vdc
50 nAdc
300
Vdc
0.2
0.3
Vdc
0.85
0.95
− MHz
4.0 pF
8.0 pF
5.0 dB
35
ns
35
275
ns
50
0.28
0.23
IC/IB = 10
VCE(sat) = 150°C
0.18
−55°C
0.13 25°C
0.08
0.03
0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage vs.
Collector Current
400
350 150°C (5.0 V)
300 150°C (1.0 V)
250 25°C (5.0 V)
200 25°C (1.0 V)
150 −55°C (5.0 V)
100 −55°C (1.0 V)
50
0
0.0001 0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain vs. Collector Current
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ON Semiconductor NST3904DP6T5G
NST3904DP6T5G
1.1
IC/IB = 10
1.0
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
0.4 150°C
0.3
0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
2.0
1.8
1.6 IC = 100 mA
1.4
80 mA
1.2
1.0
0.8
0.6
0.4
20 mA
0.2
0
0.0001
60 mA
40 mA
0.001
Ib, BASE CURRENT (A)
Figure 5. Saturation Region
0.01
1.1
VCE = 2.0 V
1.0
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
0.4 150°C
0.3
0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Turn−On Voltage vs.
Collector Current
8.0
7.5
7.0
6.5
6.0
5.5 Cib
5.0
4.5
4.0
3.5
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
4.5 5.0
Veb, EMITTER BASE VOLTAGE (V)
Figure 6. Input Capacitance
3.0
2.5
2.0
1.5
1.0
0.5
0
Cob
5.0 10 15 20 25
Vcb, COLLECTOR BASE VOLTAGE (V)
Figure 7. Output Capacitance
30
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