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NST3906F3T5G Dataheets PDF



Part Number NST3906F3T5G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description PNP Transistor
Datasheet NST3906F3T5G DatasheetNST3906F3T5G Datasheet (PDF)

NST3906F3T5G PNP General Purpose Transistor The NST3906F3T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563/SOT−963 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−1123 surface mount package. This device is ideal for low−power surface mount applications where board space is at a premium. Features • hFE, 100−300 • Low VCE(sat), ≤ 0.4 V • Reduces Board Space • This is a Pb−Free Device MAXIMUM RATINGS Rating Collector −Emitter V.

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NST3906F3T5G PNP General Purpose Transistor The NST3906F3T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563/SOT−963 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−1123 surface mount package. This device is ideal for low−power surface mount applications where board space is at a premium. Features • hFE, 100−300 • Low VCE(sat), ≤ 0.4 V • Reduces Board Space • This is a Pb−Free Device MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS Symbol VCEO VCBO VEBO IC Value −40 −40 −5.0 −200 Unit Vdc Vdc Vdc mAdc Characteristic Total Device Dissipation, TA = 25°C Derate above 25°C Symbol PD (Note 1) Max 290 2.3 Unit mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 1) 432 °C/W Total Device Dissipation, TA = 25°C Derate above 25°C PD 347 mW (Note 2) 2..


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