SISS98DN

www.vishay.com SiSS98DN Vishay Siliconix N-Channel 200 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 200 RDS(on) () (MAX.) 0.105 at VGS = 10 V 0.110 at VGS = 7.5 V ID (A) a 14.1 13.8 Qg (TYP.) 9.3 nC PowerPAK® 1212-8S D D D 6 7 5 D 8 3.3 mm 1 Top View 3.3 mm 1 4 3 S 2 S S G Bottom View Ordering Information:  SiSS98DN-T1-GE3 (lead (Pb)-free and halogen-free) FEATURES ThunderFET® power MOSFET Optimized Qg and Qoss improve efficiency 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Primary side switching Synchronous rectification DC/DC converters Boost converters G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 100 μs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current...