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SQD40P10-40L
Vishay Siliconix
Automotive P-Channel 100 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.5 V ID (A) Configuration
TO-252
- 100 0.040 0.048 - 38 Single
S
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
G
GDS Top View
Drain Connected to Tab
D P-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
TO-252 SQD40P10-40L-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C TC = 125 °C
ID
Continuous Source Current (Diode Conduction)a
IS
Pulsed Drain Currentb
IDM
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
IAS EAS
Maximum Power Dissipation.