SQD50N05-11L

www.vishay.com SQD50N05-11L Vishay Siliconix Automotive N-Channel 50 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Configuration Package TO-252 50 0.011 0.015 50 Single TO-252 FEATURES TrenchFET® power MOSFET Package with low thermal resistance 100 % Rg and UIS tested AEC-Q101 qualified d Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D Drain connected to tab G S D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) a TC = 25 °C a TC = 125 °C Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH Maximum Power Dissipation b TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 50 ± 20 50 32 50 200 22.5 25.3 75 25 -55 to +175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. PCB Mount c SYMBOL RthJA RthJC LIMIT 60 2 UNIT V A mJ W °C UNIT °C/W S15-1874-Rev. D, 10-Aug-15 1 Document Number: 72168 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS...