N-Channel MOSFET
SSM4232GM
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PRODUCT SUMMARY
Low On-Resistance Simple Drive Requirement Dual N MO...
Description
SSM4232GM
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PRODUCT SUMMARY
Low On-Resistance Simple Drive Requirement Dual N MOSFET Package
DESCRIPTION
D2 D2 D1 D1
SO-8
G2 S2 G1 S1
The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
BVDSS RDS(ON) ID
D1
G1 G2 S1
30V 22mΩ 7.8A
D2
S2
Pb-free; RoHS-compliant
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol Rthj-a
Parameter Thermal Resistance Junction-ambient3
Rating 30 ±20 7.8 6.2 30 2
0.016 -55 to 150 -55 to 150
Units V V A A A W
W/℃ ℃ ℃
Max.
Value 62.5
Unit ℃/W
09/23/2007 Rev.1.00
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