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SM4365NAKP Dataheets PDF



Part Number SM4365NAKP
Manufacturers Sinopower
Logo Sinopower
Description N-Channel MOSFET
Datasheet SM4365NAKP DatasheetSM4365NAKP Datasheet (PDF)

SM4365NAKP Features · 30V/45A, RDS(ON)= 10.5mW (max.) @ VGS=10V RDS(ON)= 14.5mW (max.) @ VGS=4.5V · 100% UIS + Rg Tested · Reliable and Rugged · Lead Free and Green Devices Available (RoHS Compliant) ® N-Channel Enhancement Mode MOSFET Pin Description DDDD S S SG DFN5x6A-8_EP (5,6,7,8) DD DD Pin 1 Applications · Power Management in Desktop Computer or DC/DC Converters. (4) G SSS ( 1, 2, 3 ) N-Channel MOSFET Ordering and Marking Information SM4365NA Assembly Material Handling Code Tempe.

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SM4365NAKP Features · 30V/45A, RDS(ON)= 10.5mW (max.) @ VGS=10V RDS(ON)= 14.5mW (max.) @ VGS=4.5V · 100% UIS + Rg Tested · Reliable and Rugged · Lead Free and Green Devices Available (RoHS Compliant) ® N-Channel Enhancement Mode MOSFET Pin Description DDDD S S SG DFN5x6A-8_EP (5,6,7,8) DD DD Pin 1 Applications · Power Management in Desktop Computer or DC/DC Converters. (4) G SSS ( 1, 2, 3 ) N-Channel MOSFET Ordering and Marking Information SM4365NA Assembly Material Handling Code Temperature Range Package Code Package Code KP : DFN5x6A-8_EP Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device SM4365NA KP : SM4365A XXXXX XXXXX - Lot Code Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ã Sinopower Semiconductor, Inc. Rev. A.7 - October, 2017 1 www.sinopowersemi.com SM4365NAKP ® Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted) Symbol Parameter Rating Unit Common Ratings VDSS VGSS Drain-Source Voltage Gate-Source Voltage 30 ±20 V TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -55 to 150 °C IS Diode Continuous Forward Current 30 A IDP Pulse Drain Current Tested TC=25°C TC=100°C 120 A 80 ID Continuous Drain Current TC=25°C TC=100°C 45 A 28 PD Maximum Power Dissipation TC=25°C TC=100°C 32 W 12.8 RqJC Thermal Resistance-Junction to Case Steady State 3.9 °C/W RqJA Thermal Resistance-Junction to Ambient t £ 10s Steady State 20 °C/W 50 IAS a Avalanche Current, Single pulse L=0.1mH 18 A EAS a Avalanche Energy, Single pulse L=0.1mH 16.2 mJ Note a:UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC). Copyright ã Sinopower Semiconductor, Inc. Rev. A.7 - October, 2017 2 www.sinopowersemi.com SM4365NAKP ® Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min. Static Characteristics BVDSS BVDSSt Drain-Source Breakdown Voltage Drain-Source Breakdown Voltage (transient) IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current RDS(ON) b Drain-Source On-state Resistance Gfs Forward Transconductance Diode Characteristics VSD b Diode Forward Voltage trr Reverse Recov.


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