Document
SM4365NAKP
Features
· 30V/45A,
RDS(ON)= 10.5mW (max.) @ VGS=10V RDS(ON)= 14.5mW (max.) @ VGS=4.5V
· 100% UIS + Rg Tested · Reliable and Rugged · Lead Free and Green Devices Available
(RoHS Compliant)
®
N-Channel Enhancement Mode MOSFET
Pin Description
DDDD
S S SG
DFN5x6A-8_EP
(5,6,7,8) DD DD
Pin 1
Applications
· Power Management in Desktop Computer or
DC/DC Converters.
(4) G
SSS ( 1, 2, 3 )
N-Channel MOSFET
Ordering and Marking Information
SM4365NA
Assembly Material Handling Code Temperature Range
Package Code
Package Code KP : DFN5x6A-8_EP
Operating Junction Temperature Range C : -55 to 150 oC
Handling Code TR : Tape & Reel
Assembly Material G : Halogen and Lead Free Device
SM4365NA KP :
SM4365A XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc. Rev. A.7 - October, 2017
1
www.sinopowersemi.com
SM4365NAKP
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS VGSS
Drain-Source Voltage Gate-Source Voltage
30 ±20 V
TJ Maximum Junction Temperature
150 °C
TSTG Storage Temperature Range
-55 to 150
°C
IS Diode Continuous Forward Current
30 A
IDP Pulse Drain Current Tested
TC=25°C TC=100°C
120 A
80
ID Continuous Drain Current
TC=25°C TC=100°C
45 A
28
PD Maximum Power Dissipation
TC=25°C TC=100°C
32 W
12.8
RqJC Thermal Resistance-Junction to Case
Steady State
3.9 °C/W
RqJA Thermal Resistance-Junction to Ambient
t £ 10s Steady State
20 °C/W
50
IAS a Avalanche Current, Single pulse
L=0.1mH
18 A
EAS a Avalanche Energy, Single pulse
L=0.1mH
16.2 mJ
Note a:UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Copyright ã Sinopower Semiconductor, Inc. Rev. A.7 - October, 2017
2
www.sinopowersemi.com
SM4365NAKP
®
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min.
Static Characteristics
BVDSS BVDSSt
Drain-Source Breakdown Voltage
Drain-Source Breakdown Voltage (transient)
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current
RDS(ON) b Drain-Source On-state Resistance
Gfs Forward Transconductance Diode Characteristics
VSD b Diode Forward Voltage trr Reverse Recov.