Document
SSM4407GM P-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS R DS(ON) ID
-30V 14mΩ -10.7A
Pb-free; RoHS-compliant SO-8
D D D D
SO-8
G S SS
DESCRIPTION
The SSM4407GM acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits.
The SSM4407GM is supplied in a RoHS-compliant SO-8 package, which is widely used for medium power commercial and industrial surface mount applications.
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID
IDM PD
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current, TC = 25°C
Pulsed drain current1
TC = 70°C
Total power dissipation, TC = 25°C Linear derating factor
Value -30 ±25 -10.7 -8.6 -50 2.5 0.02
Units V V A A A W
W/°C
TSTG TJ
Storage temperature range Operating junction temperature range
THERMAL CHARACTERISTICS
Symbol RΘJA
Parameter Maximum thermal resistance, junction-amb.