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SM2329PSA Dataheets PDF



Part Number SM2329PSA
Manufacturers Sinopower
Logo Sinopower
Description P-Channel MOSFET
Datasheet SM2329PSA DatasheetSM2329PSA Datasheet (PDF)

SM2329PSA ® P-Channel Enhancement Mode MOSFET Features Pin Description · -20V/-3.5A, RDS(ON)= 75mW (Max.) @ VGS=-4.5V RDS(ON)= 115mW (Max.) @ VGS=-2.5V RDS(ON)= 188mW (Max.) @ VGS=-1.8V · ESD Protection · 100% UIS+Rg Tested · Reliable and Rugged · Lead Free and Green Devices Available (RoHS Compliant) Applications · Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. D S G Top View of SOT-23 D G S P-Channel MOSFET Ordering and Marking Information SM2329P.

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SM2329PSA ® P-Channel Enhancement Mode MOSFET Features Pin Description · -20V/-3.5A, RDS(ON)= 75mW (Max.) @ VGS=-4.5V RDS(ON)= 115mW (Max.) @ VGS=-2.5V RDS(ON)= 188mW (Max.) @ VGS=-1.8V · ESD Protection · 100% UIS+Rg Tested · Reliable and Rugged · Lead Free and Green Devices Available (RoHS Compliant) Applications · Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. D S G Top View of SOT-23 D G S P-Channel MOSFET Ordering and Marking Information SM2329PS Assembly Material Handling Code Temperature Range Package Code Package Code A : SOT-23 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device SM2329PS A : B29XX XX - Lot Code Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - October, 2017 1 www.sinopowersemi.com SM2329PSA ® Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Parameter ID* Continuous Drain Current IDM* IS* TJ TSTG PD* Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation RqJA* Thermal Resistance-Junction to Ambient Note *:Surface Mounted on 1in2 pad area, t £ 10sec. TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C t £ 10s Steady state Rating -20 ±12 -3.5 -2.8 -14 -11.2 -1 150 -55 to 150 1.4 0.9 90 125 Unit V A °C W °C/W Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - October, 2017 2 www.sinopowersemi.com SM2329PSA ® Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min. Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250mA IDSS Zero Gate Voltage Drain Current VDS=-16V, VGS=0V TJ=85°C VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250mA IGSS Gate Leakage Current VGS=±10V, VDS=0V VGS=-4.5V, IDS=-3.3A RDS(ON) a Drain-Source On-State Resistance VGS=-2.5V, IDS=-2.1A VSD a Diode Forward Voltage Dynamic Characteristics b VGS=-1.8V, IDS=-0.9A ISD=-1A, VGS=0V -20 - -0.5 - RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time trr Reverse Recovery Time Qrr Reverse Recovery Charge Gate Charge Characteristics b VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-10V, Frequency=1.0MHz VDD=-10V, RL=10W, IDS=-1A, VGEN=-4.5V, RG=6W ISD=-3.3A, dlSD/dt =100A/µs Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=-10V, VGS=-4.5V, IDS=-3.3A Note a:Pulse test; pulse width£300ms, duty cycle£2%. Note b:Guaranteed by design, not subject to production testing. - - Typ. -0.7 60 85 125 -0.7 10.7 365 75 60 6.8 13.8 30 23 16 6 4.6 0.7 1.8 Max. -1 -30 -1 ±10 75 115 188 -1 - - Unit V mA V mA mW V W pF ns nC nC Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - October, 2017 3 www.sinopowersemi.com SM2329PSA Typical Operating Characteristics ® Ptot - Power (W) -ID - Drain Current (A) Power Dissipation 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 T =25oC 0.0 A 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Safe Operation Area 30 10 300ms 1 1ms 10ms 100ms 0.1 1s DC 0.01 TA=25oC 0.01 0.1 1 10 100 -VDS - Drain - Source Voltage (V) Drain Current 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 TA=25oC,VG=-4.5V 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Thermal Transient Impedance 2 1 Duty = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 Single Pulse 1E-3 1E-4 1E-3 0.01 Mounted on 1in2 pad RqJA : 90 oC/W 0.1 1 10 30 Square Wave Pulse Duration (sec) -ID - Drain Current (A) Rds(on) Limit Normalized Transient Thermal Resistance Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - October, 2017 4 www.sinopowersemi.com SM2329PSA Typical Operating Characteristics (Cont.) ® -ID - Drain Current (A) Output Characteristics 14 VGS=-3,-4,-5,-6, 12 -7,-8,-9,-10V 10 -2V 8 6 4 -1.5V 2 -1V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -VDS - Drain-Source Voltage (V) DS(ON)R - On - Resistance (mW) Drain-Source On Resistance 210 180 VGS=-1.8V 150 120 VGS=-2.5V 90 V =-4.5V GS 60 30 0 0 2 4 6 8 10 12 -ID - Drain Current (A) DS(ON)R - O.


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