Document
SM2329PSA
®
P-Channel Enhancement Mode MOSFET
Features
Pin Description
· -20V/-3.5A,
RDS(ON)= 75mW (Max.) @ VGS=-4.5V RDS(ON)= 115mW (Max.) @ VGS=-2.5V RDS(ON)= 188mW (Max.) @ VGS=-1.8V
· ESD Protection · 100% UIS+Rg Tested · Reliable and Rugged · Lead Free and Green Devices Available
(RoHS Compliant)
Applications
· Power Management in Notebook Computer,
Portable Equipment and Battery Powered Systems.
D S
G
Top View of SOT-23
D
G
S
P-Channel MOSFET
Ordering and Marking Information
SM2329PS
Assembly Material Handling Code Temperature Range
Package Code
Package Code A : SOT-23
Operating Junction Temperature Range C : -55 to 150 oC
Handling Code TR : Tape & Reel
Assembly Material G : Halogen and Lead Free Device
SM2329PS A :
B29XX
XX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - October, 2017
1
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SM2329PSA
®
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
VDSS VGSS
Drain-Source Voltage Gate-Source Voltage
Parameter
ID* Continuous Drain Current
IDM*
IS* TJ TSTG
PD*
Pulsed Drain Current
Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range
Maximum Power Dissipation
RqJA* Thermal Resistance-Junction to Ambient Note *:Surface Mounted on 1in2 pad area, t £ 10sec.
TA=25°C TA=70°C TA=25°C TA=70°C
TA=25°C TA=70°C t £ 10s Steady state
Rating
-20 ±12 -3.5 -2.8 -14 -11.2 -1 150 -55 to 150 1.4 0.9 90 125
Unit V
A
°C W °C/W
Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - October, 2017
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SM2329PSA
®
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250mA
IDSS
Zero Gate Voltage Drain Current VDS=-16V, VGS=0V TJ=85°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=-250mA
IGSS Gate Leakage Current
VGS=±10V, VDS=0V
VGS=-4.5V, IDS=-3.3A RDS(ON) a Drain-Source On-State Resistance VGS=-2.5V, IDS=-2.1A
VSD a Diode Forward Voltage Dynamic Characteristics b
VGS=-1.8V, IDS=-0.9A ISD=-1A, VGS=0V
-20 -
-0.5 -
RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time
tr Turn-on Rise Time td(OFF) Turn-off Delay Time
tf Turn-off Fall Time trr Reverse Recovery Time Qrr Reverse Recovery Charge Gate Charge Characteristics b
VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-10V, Frequency=1.0MHz
VDD=-10V, RL=10W, IDS=-1A, VGEN=-4.5V, RG=6W
ISD=-3.3A, dlSD/dt =100A/µs
Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge
VDS=-10V, VGS=-4.5V, IDS=-3.3A
Note a:Pulse test; pulse width£300ms, duty cycle£2%.
Note b:Guaranteed by design, not subject to production testing.
-
-
Typ.
-0.7 60 85 125 -0.7
10.7 365 75 60 6.8 13.8 30 23 16
6
4.6 0.7 1.8
Max.
-1 -30 -1 ±10 75 115 188 -1
-
-
Unit V mA V mA mW V W pF
ns
nC
nC
Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - October, 2017
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SM2329PSA
Typical Operating Characteristics
®
Ptot - Power (W) -ID - Drain Current (A)
Power Dissipation
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2
T =25oC 0.0 A
0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C)
Safe Operation Area
30 10
300ms 1 1ms
10ms 100ms 0.1 1s DC
0.01 TA=25oC 0.01 0.1 1 10 100 -VDS - Drain - Source Voltage (V)
Drain Current
4.0 3.5 3.0 2.5
2.0 1.5
1.0
0.5 0.0 TA=25oC,VG=-4.5V
0 20 40 60 80
100 120 140 160
Tj - Junction Temperature (°C)
Thermal Transient Impedance
2 1 Duty = 0.5
0.2 0.1 0.05 0.1 0.02 0.01
0.01
Single Pulse
1E-3 1E-4 1E-3 0.01
Mounted on 1in2 pad RqJA : 90 oC/W
0.1 1 10 30
Square Wave Pulse Duration (sec)
-ID - Drain Current (A)
Rds(on) Limit
Normalized Transient Thermal Resistance
Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - October, 2017
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SM2329PSA
Typical Operating Characteristics (Cont.)
®
-ID - Drain Current (A)
Output Characteristics
14 VGS=-3,-4,-5,-6,
12 -7,-8,-9,-10V
10 -2V
8
6
4 -1.5V
2 -1V
0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
-VDS - Drain-Source Voltage (V)
DS(ON)R - On - Resistance (mW)
Drain-Source On Resistance
210
180 VGS=-1.8V 150
120 VGS=-2.5V
90 V =-4.5V
GS
60
30
0 0 2 4 6 8 10 12 -ID - Drain Current (A)
DS(ON)R - O.