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SM2305PSA Dataheets PDF



Part Number SM2305PSA
Manufacturers Sinopower
Logo Sinopower
Description P-Channel MOSFET
Datasheet SM2305PSA DatasheetSM2305PSA Datasheet (PDF)

SM2305PSA ® P-Channel Enhancement Mode MOSFET Features • -20V/-4.9A , RDS(ON)=43mΩ (Max.) @ VGS=-4.5V RDS(ON)=58mΩ (Max.) @ VGS=-2.5V RDS(ON)=88mΩ (Max.) @ V =-1.8V GS • 100% UIS + Rg Tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. Pin Description D S G Top View of SOT-23 D G S P-Channel MOSFET Ordering and Marking Information SM2305PS SM23.

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SM2305PSA ® P-Channel Enhancement Mode MOSFET Features • -20V/-4.9A , RDS(ON)=43mΩ (Max.) @ VGS=-4.5V RDS(ON)=58mΩ (Max.) @ VGS=-2.5V RDS(ON)=88mΩ (Max.) @ V =-1.8V GS • 100% UIS + Rg Tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. Pin Description D S G Top View of SOT-23 D G S P-Channel MOSFET Ordering and Marking Information SM2305PS SM2305PS A : Assembly Material Handling Code Temperature Range Package Code Package Code A : SOT-23 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device B05XX XX - Lot Code Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright © Sinopower Semiconductor, Inc. Rev. A.3 - June, 2015 1 www.sinopowersemi.com SM2305PSA ® Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Sym bol VDSS Drain-Source Voltage VGSS Gate-Source Voltage Parameter ID* Continuous Drain Current IDM* Pulsed Drain Current IS* TJ TSTG Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range PD* Maximum Power Dissipation RθJA* Thermal Resistance-Junction to Ambient RθJL Thermal Resistance-Junction to Lead TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C t ≤ 10s Steady state Steady state Rating -20 ±12 -4.9 -3.9 -19.7 -15.7 -2 150 -55 to 150 1.6 1.0 80 100 52 Note : *Surface Mounted on 1in2 pad area, t ≤ 10sec. Unit V A A °C W °C/W Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions STATIC CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA VDS=-16V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=85°C VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current VDS=VGS, IDS=-250µA VGS=±12V, VDS=0V VGS=-4.5V, IDS=-4.9A RDS(ON) a Drain-Source On-State Resistance VGS=-2.5V, IDS=-3.1A VSDa Diode Forward Voltage GATE CHARGE CHARACTERISTICS b VGS=-1.8V, IDS=-2A ISD=-1A, VGS=0V Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=-10V, VGS=-4.5V, IDS=-4.9A Min. -20 - -0.5 - - Typ. Max. Unit - -V - -1 µA - -30 -0.7 -1 - ±100 V nA 33 43 42 58 mΩ 60 88 -0.7 -1 V 8 11 1.6 - nC 1.9 - Copyright © Sinopower Semiconductor, Inc. Rev. A.3 - June, 2015 2 www.sinopowersemi.com SM2305PSA ® Electrical Characteristics (Cont.) (T A = 25°C unless otherwise noted) Symbol Parameter DYNAMIC CHARACTERISTICS b Test Conditions Min. RG Ciss C os s Crss td(ON) tr td(OFF) tf trr Qrr Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Reverse Recovery Time Reverse Recovery Charge VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-10V, Frequency=1.0MHz VDD=-10V, RL=10Ω, IDS=-1A, VGEN=-4.5V, RG=6Ω ISD=-4.9A, dlSD/dt =100A/µs - Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%. Note b : Guaranteed by design, not subject to production testing. Typ. 2.4 815 145 110 8 12.8 33 18 16 8 Max. 5 1060 14.4 23 59.4 32.4 - Unit Ω pF ns ns nC Copyright © Sinopower Semiconductor, Inc. Rev. A.3 - June, 2015 3 www.sinopowersemi.com SM2305PSA Typical Operating Characteristics ® Ptot - Power (W) Power Dissipation 1.8 1.5 1.2 0.9 0.6 0.3 T =25oC A 0.0 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) -ID - Drain Current (A) Drain Current 6 5 4 3 2 1 T =25oC,V =-4.5V AG 0 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) -ID - Drain Current (A) Rds(on) Limit Safe Operation Area 50 10 300µs 1ms 1 10ms 100ms 0.1 1s DC T =25oC A 0.01 0.01 0.1 1 10 100 -VDS - Drain - Source Voltage (V) Normalized Transient Thermal Resistance Thermal Transient Impedance 2 1 Duty = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 Single Pulse 1E-3 1E-4 1E-3 0.01 Mounted on 1in2 pad R : 80 oC/W θJA 0.1 1 10 30 Square Wave Pulse Duration (sec) Copyright © Sinopower Semiconductor, Inc. Rev. A.3 - June, 2015 4 www.sinopowersemi.com SM2305PSA Typical Operating Characteristics (Cont.) ® -ID - Drain Current (A) Output Characteristics 20 V =-3,-4,-5,-6,-7,-8,-9,-10V GS 16 -2V 12 -1.8V 8 -1.5V 4 0 0.0 .


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