Document
SM2305PSA
®
P-Channel Enhancement Mode MOSFET
Features
• -20V/-4.9A ,
RDS(ON)=43mΩ (Max.) @ VGS=-4.5V
RDS(ON)=58mΩ (Max.) @ VGS=-2.5V
RDS(ON)=88mΩ
(Max.)
@
V =-1.8V GS
• 100% UIS + Rg Tested
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered Systems.
Pin Description
D S
G
Top View of SOT-23
D
G
S
P-Channel MOSFET
Ordering and Marking Information
SM2305PS SM2305PS A :
Assembly Material Handling Code Temperature Range
Package Code
Package Code A : SOT-23
Operating Junction Temperature Range C : -55 to 150 oC
Handling Code TR : Tape & Reel
Assembly Material G : Halogen and Lead Free Device
B05XX
XX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc. Rev. A.3 - June, 2015
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SM2305PSA
®
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Sym bol VDSS Drain-Source Voltage VGSS Gate-Source Voltage
Parameter
ID* Continuous Drain Current
IDM* Pulsed Drain Current
IS* TJ TSTG
Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range
PD* Maximum Power Dissipation
RθJA* Thermal Resistance-Junction to Ambient RθJL Thermal Resistance-Junction to Lead
TA=25°C TA=70°C TA=25°C TA=70°C
TA=25°C TA=70°C t ≤ 10s Steady state Steady state
Rating -20 ±12 -4.9 -3.9 -19.7 -15.7 -2 150
-55 to 150 1.6 1.0 80 100 52
Note : *Surface Mounted on 1in2 pad area, t ≤ 10sec.
Unit V A
A °C W °C/W
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
STATIC CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA
VDS=-16V, VGS=0V
IDSS Zero Gate Voltage Drain Current
TJ=85°C
VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current
VDS=VGS, IDS=-250µA VGS=±12V, VDS=0V
VGS=-4.5V, IDS=-4.9A RDS(ON) a Drain-Source On-State Resistance VGS=-2.5V, IDS=-3.1A
VSDa Diode Forward Voltage GATE CHARGE CHARACTERISTICS b
VGS=-1.8V, IDS=-2A ISD=-1A, VGS=0V
Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge
VDS=-10V, VGS=-4.5V, IDS=-4.9A
Min.
-20 -
-0.5 -
-
Typ. Max. Unit
- -V
- -1 µA
- -30
-0.7 -1 - ±100
V nA
33 43
42 58 mΩ
60 88
-0.7 -1
V
8 11 1.6 - nC 1.9 -
Copyright © Sinopower Semiconductor, Inc. Rev. A.3 - June, 2015
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SM2305PSA
®
Electrical
Characteristics
(Cont.)
(T A
= 25°C unless
otherwise
noted)
Symbol
Parameter
DYNAMIC CHARACTERISTICS b
Test Conditions
Min.
RG Ciss C os s Crss td(ON) tr td(OFF) tf trr Qrr
Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Reverse Recovery Time Reverse Recovery Charge
VGS=0V,VDS=0V,F=1MHz
VGS=0V, VDS=-10V, Frequency=1.0MHz
VDD=-10V, RL=10Ω, IDS=-1A, VGEN=-4.5V, RG=6Ω
ISD=-4.9A, dlSD/dt =100A/µs
-
Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
Note b : Guaranteed by design, not subject to production testing.
Typ.
2.4 815 145 110
8 12.8 33 18 16
8
Max.
5 1060
14.4 23 59.4 32.4 -
Unit Ω pF
ns ns nC
Copyright © Sinopower Semiconductor, Inc. Rev. A.3 - June, 2015
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SM2305PSA
Typical Operating Characteristics
®
Ptot - Power (W)
Power Dissipation
1.8
1.5
1.2
0.9
0.6
0.3 T =25oC
A
0.0 0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
-ID - Drain Current (A)
Drain Current
6
5
4
3
2
1 T =25oC,V =-4.5V
AG
0 0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
-ID - Drain Current (A)
Rds(on) Limit
Safe Operation Area
50
10 300µs 1ms
1 10ms
100ms 0.1 1s
DC
T =25oC A
0.01 0.01 0.1 1 10 100
-VDS - Drain - Source Voltage (V)
Normalized Transient Thermal Resistance
Thermal Transient Impedance
2 1 Duty = 0.5
0.2 0.1 0.05 0.1 0.02
0.01
0.01 Single Pulse
1E-3 1E-4 1E-3 0.01
Mounted on 1in2 pad R : 80 oC/W
θJA
0.1 1
10 30
Square Wave Pulse Duration (sec)
Copyright © Sinopower Semiconductor, Inc. Rev. A.3 - June, 2015
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SM2305PSA
Typical Operating Characteristics (Cont.)
®
-ID - Drain Current (A)
Output Characteristics
20 V =-3,-4,-5,-6,-7,-8,-9,-10V
GS
16 -2V
12 -1.8V
8
-1.5V 4
0 0.0 .