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KGT15N120NDH

KEC

NPT IGBT

SEMICONDUCTOR TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and hi...


KEC

KGT15N120NDH

File Download Download KGT15N120NDH Datasheet


Description
SEMICONDUCTOR TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES High speed switching High system efficiency Soft current turn-off waveforms Extremely enhanced avalanche capability KGT15N120NDH MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage Gate-Emitter Voltage VCES VGES 1200 20 V V Collector Current Pulsed Collector Current @TC=25 @TC=100 Diode Continuous Forward Current @TC=100 Diode Maximum Forward Current 30 A IC 15 A ICM* 45 A IF 15 A IFM 45 A Maximum Power Dissipation Maximum Junction Temperature @TC=25 @TC=100 190 W PD 75 W Tj 150 Storage Temperature Range Tstg -55 to + 150 *Repetitive rating : Pulse width limited by max. junction temperature THERMAL CHARACTERISTIC CHARACTERISTIC Thermal Resistance, Junction to Case (IGBT) Thermal Resistance, Junction to C...




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