Document
APM4410
N-Channel Enhancement Mode MOSFET
Features
Pin Description
• 30V/11.5A, RDS(ON) = 9mΩ(typ.) @ VGS = 10V
RDS(ON) =14.5mΩ(typ.) @ VGS = 4.5V
• High Density Cell Design • Reliable and Rugged • SO-8 Package
Applications
S1 S2 S3 G4
8D 7D 6D 5D
SO − 8
D
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered Systems
G
Ordering and Marking Information
S
N-Channel MOSFET
APM 4410
H a n d lin g C o d e Temp. Range Package Code
Package Code K : SO -8
O perating Junction Tem p. R ange C : -55 to 125°C
H andling C ode TU : Tube TR : Tape & Reel
APM4410 K :
APM 4410 XXXXX
XXX XX - D ate Code
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
VDSS VGSS
ID IDM PD
Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current – Continuous Maximum Drain Current – Pulsed Maximum Power Dissipation
TA=25°C TA=100°C
Rating 30 ±20 11.5 50 2.5
1.0
Unit V A W
ANPEC reserves the right to make changes to .