Power MOSFET
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switc...
Description
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
G
Benefits l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness l Fully Characterized Capacitance and Avalanche
SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free
PD - 96199A
IRF1324PbF
HEXFET® Power MOSFET
D VDSS RDS(on) typ. max.
ID (Silicon Limited)
24V
1.2m: 1.5m:
c353A
S ID (Package Limited) 195A
GDS
TO-220AB IRF1324PbF
G Gate
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
dPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ TSTG
Operating Junction and Storage Temperature Range Sold...
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