YMP120N06 Datasheet PDF | YM





(PDF) YMP120N06 Datasheet PDF

Part Number YMP120N06
Description N-Channel Enhancement Mode Power MOSFET
Manufacture YM
Total Page 7 Pages
PDF Download Download YMP120N06 Datasheet PDF

Features: YMP120N06 N-Channel Enhancement Mode P ower MOSFET Features ● VDS=70V;ID= 120A@ VGS =10V RDS(ON)< 4 mΩ @ VGS =1 0V ; ● Low gate charge ● Low Crss (typical 197pF) ● Fast switching ● 100% avalanche tested ● Improved dv/ dt capability ● Rohs product Product Summary BVDSS typ. RDS(ON) typ. max. ID 60 4 6 120 V mΩ mΩ A 100% UIS TESTED! Application ● High efficien cy switch mode power supplies ● UPS TO-220-3L top view Schematic diagram Package Marking And Ordering Informatio n Device Marking Device Device Packa ge YMP120N06 YMP120N06 TO-220-3L Re el Size - Tape width - Quantity - Ta ble 1. Absolute Maximum Ratings (TA=25 ) Parameter Drain-Source Voltage (VGS =0V) Gate-Source Voltage (VDS=0V) Dra in Current (DC) at Tc=25℃ Drain Curre nt (DC) at Tc=100℃ Drain Current-Cont inuous@ Current-Pulsed (Note 1) Maximum Power Dissipation(Tc=25℃) Derating f actor Single pulse avalanche energy (No te 2) Operating Junction and Storage Temperature Range Notes 1..

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YMP120N06 datasheet
YMP120N06
N-Channel
Enhancement Mode Power MOSFET
Features
VDS=70VID=120A@ VGS =10V
RDS(ON)< 4 m@ VGS =10V
Low gate charge
Low Crss (typical 197pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Rohs product
Product Summary
BVDSS typ.
RDS(ON) typ.
max.
ID
60
4
6
120
V
m
m
A
100% UIS TESTED!
Application
High efficiency switch mode power supplies
UPS
TO-220-3L top view
Schematic diagram
Package Marking And Ordering Information
Device Marking
Device
Device Package
YMP120N06
YMP120N06
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Table 1. Absolute Maximum Ratings (TA=25)
Parameter
Drain-Source Voltage (VGS=0V
Gate-Source Voltage (VDS=0V)
Drain Current (DC) at Tc=25
Drain Current (DC) at Tc=100
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation(Tc=25)
Derating factor
Single pulse avalanche energy (Note 2)
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS conditionTj=25,VDD=50V, L=0.15mH R g=25;
Symbol
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
PD
EAS
TJ,TSTG
Value
60
±20
120
80
390
200
1.29
900
-55 To 150
Unit
V
V
A
A
A
W
W/
mJ
1/7

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