MOS-TECH Semiconductor Co.,LTD
MT6010
60V N-Channel MOSFET
General Description
These N-Channel enhancement mode power ...
MOS-TECH Semiconductor Co.,LTD
MT6010
60V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Mos-tech’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
Features
15A, 60V, RDS(on) = 0.04Ω @VGS = 10 V Low gate charge ( typical 11.5 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
GDS
TO-220
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
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