MT3202

MOS-TECH Semiconductor Co.,LTD MT3202 60V N-Channel MOSFET Features 65A, 60V, RDS(on) = 0.016Ω @VGS = 10 V Low gate charge ( typical 167nC) Low Crss ( typical 43pF) Fast switching Improved dv/dt capability  Description These N-Channel enhancement mode power field effect transistors are produced using Mos-tech’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction,car audio,electronic lamp ballast based on half bridge topology. D GDS TO-220 G Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Vol...